20N40H KIA
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Technical content
20A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N40HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description ThisPowerMOSFETisproducedusingKIA ’sadvancedplanarstripeDMOStechnology.This advancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperior switchingperformance,andcommutationmode.Thesedevicesarewellsuitedforhighefficiencyswitched modepowersupplies,activepowerfactorcorrectionbasedonhalfbridgetopology. 2.Features n RDS(on)=0.20Ω @ VGS=10V n Low gate charge ( typical 50nC) n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pinconfiguration 1of7 Rev1.0OCT2014 Pin Function
1 Gate
2 Drain
3 Source
20A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N40HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units TO220 TO220F TO3P Drain-sourcevoltage VDSS 400 V Gate-sourcevoltage VGSS +30 V Draincurrentcontinuous TC=25ºC ID 20 20* 20 A TC=100ºC 10.8 10.8* 10.8 A Draincurrentpulsed(note1) IDP 72 72 72 A Avalancheenergy Repetitive(note1) EAR 20.25 mJ Singlepulse(note2) EAS 711 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25ºC PD 202.5 40 202.5 W derateabove25 ºC 1.62 0.32 1.62 W/ºC Junctiontemperature TJ +150 ºC Storagetemperature TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 5. Thermalcharacteristics Parameter Symbol Ratings UnitsTO220 TO220F TO3P Thermalresistance,junction-ambient RthJA 62.5 62.5 62.5 ºC/WThermalresistance,case-to-sinktyp. RthCS 0.5 - 0.5 Thermalresistance,Junction-case RthJC 0.61 3.11 0.61 2of7 Rev1.0OCT2014
20A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N40HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisespecified) Parameter Symbol Conditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 400 - - V Zerogatevoltagedraincurrent IDSS VDS=400V,V GS=0V - - 1 μA VDS=320V,T C=125 ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperaturecoefficient △BVDSS/△TJ ID=250μA - 0.5 - V/°C Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 3.0 - 5.0 V Staticdrain-sourceon-resistance RDS(on) VDS=10V,ID=9.0A - 0.20 0.25 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 2135 - pF Outputcapacitance Coss - 255 - pF Reversetransfercapacitance Crss - 35 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=200V,ID=20.0A, RG=25Ω (note4,5) - 50 - ns Risetime tr - 170 - ns Turn-offdelaytime td(off) - 90 - ns Falltime tf - 80 - ns Totalgatecharge Qg VDS=320V,ID=20.0A, VGS=10V(note4,5) - 50 - nC Gate-sourcecharge Qgs - 10.5 - nC Gate-draincharge Qgd - 24 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ID=20.0A - - 1.4 V Continuousdrain-sourcecurrent ISD - - 20.0 A Pulseddrain-sourcecurrent ISM - - 72 A Reverserecoverytime trr ISD=20.0A dlSD/dt=100A/μs (note4) - 450 - ns Reverserecoverycharge Qrr - 5.5 - μC Note:1.Repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=4.0mH,I AS=20.0A,VDD=50V,RG=25Ω,staringT J=25ºC 3.I SD<20.0A,di/dt<200A/μs,V DD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of7 Rev1.0OCT2014
20A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N40HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of7 Rev1.0OCT2014
20A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N40HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.0OCT2014
20A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N40HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.0OCT2014
20A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 20N40HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of7 Rev1.0OCT2014