20CTQ035PBF_12 VISHAY

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www.vishay.com Vishay Semiconductors Revision: 25-Aug-11 1 Document Number: 94162 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Schottky Rectifier, 2 x 10 A

FEATURES

  • 175 °C TJ operation
  • Low forward voltage drop
  • High frequency operation
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
  • Guard ring for enhanced ruggedness and long term reliability
  • Compliant to RoHS Directive 2002/95/EC
  • Designed and qualified according to JEDEC-JESD47
  • Halogen-free according to IEC 61249-2-21 definition (-N3 only)

DESCRIPTION

The VS-20CTQ... center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary ba rrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switchin g power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY Package TO-220AB IF(AV) 2 x 10 A VR 35 V, 40 V, 45 V VF at IF 0.57 V IRM max. 15 mA at 125 °C TJ max. 175 °C Diode variation Common cathode EAS 13 mJ Anode Base common cathode Common cathode Anode TO-220AB MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 20 A VRRM Range 35 to 45 V IFSM tp = 5 μs sine 1060 A VF 10 Apk, TJ = 125 °C (per leg) 0.57 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL VS- 20CTQ035PbF VS- 20CTQ035-N3 VS- 20CTQ040PbF VS- 20CTQ040-N3 VS- 20CTQ045PbF VS- 20CTQ045-N3 UNITS Maximum DC reverse voltage V R 35 35 40 40 45 45 VMaximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 I F(AV) 50 % duty cycle at TC = 145 °C, rectangular waveform 20 AMaximum peak one cycle non-repetitive surge current per leg See fig. 7 I FSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 1060 10 ms sine or 6 ms rect. pulse 265 Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2.0 A, L = 6.5 mH 13 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2.0 A

www.vishay.com Vishay Semiconductors Revision: 25-Aug-11 2 Document Number: 94162 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse width < 300 μs, duty cycle < 2 % ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop per leg See fig. 1 V FM (1) 10 A TJ = 25 °C 0.64 V 20 A 0.76 10 A T J = 125 °C 0.57 20 A 0.68 Maximum reverse leakage current per leg See fig. 2 I RM (1) TJ = 25 °C VR = Rated VR mA TJ = 125 °C 15 Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 900 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T J, TStg - 55 to 175 °C Maximum thermal resistance, junction to case per leg R thJC DC operation See fig. 4 3.25 °C/WMaximum thermal resistance, junction to case per package DC operation 1.63 Typical thermal resistance, case to heatsink R thCS Mounting surface, smooth and greased 0.50 Approximate weight 0.07 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in)maximum 12 (10) Marking device Case style TO-220AB 20CTQ035 20CTQ040 20CTQ045

www.vishay.com Vishay Semiconductors Revision: 25-Aug-11 3 Document Number: 94162 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) 0 1.80.8 1.2 VFM - Forward Voltage Drop (V) IF - Instantaneous Forward Current (A) 100 0.4 1.6 1000 TJ = 175 °C TJ = 125 °C TJ = 25 °C 0.1 0.2 0.6 1.0 1.4 0.1 100 0.01 0.001 VR - Reverse Voltage (V) IR - Reverse Current (mA) 52 5 3 5 4 515 0.0001 1000 10 20 30 40 TJ = 50 °C TJ = 175 °C TJ = 150 °C TJ = 75 °C TJ = 100 °CTJ = 125 °C TJ = 25 °C 1000 02 0 5 0 100 VR - Reverse Voltage (V) CT - Junction Capacitance (pF) TJ = 25 °C 10 30 40 0.01 0.1 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance (°C/W) 1 10 100 0.001 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC PDM D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08

www.vishay.com Vishay Semiconductors Revision: 25-Aug-11 4 Document Number: 94162 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Fig. 8 - Unclamped Inductive Test Circuit 145 01 5 IF(AV) - Average Forward Current (A) Allowable Case Temperature (°C) 155 170 165 180 150 160 175 105 20CTQ R thJC (DC) = 3.25 °C/W DC 01 5 Average Power Loss (W) IF(AV) - Average Forward Current (A) 51 0 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 RMS limit DC 1000 100 1000 tp - Square Wave Pulse Duration (µs) IFSM - Non-Repetitive Surge Current (A) 100 10 00010 At any rated load condition and with rated V RRM applied following surge Current monitor High-speed switchD.U.T. Rg = 25 Ω + Freewheel diode Vd = 25 V L IRFP460 40HFL40S02

www.vishay.com Vishay Semiconductors Revision: 25-Aug-11 5 Document Number: 94162 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ORDERING INFORMATION TABLE ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20CTQ035PbF 50 1000 Antistatic plastic tube VS-20CTQ035-N3 50 1000 Antistatic plastic tube VS-20CTQ040PbF 50 1000 Antistatic plastic tube VS-20CTQ040-N3 50 1000 Antistatic plastic tube VS-20CTQ045PbF 50 1000 Antistatic plastic tube VS-20CTQ045-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95222 Part marking information TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -N3 www.vishay.com/doc?95028 035 = 35 V 040 = 40 V 045 = 45 V Device code 62 43 5 7

20 C T Q 045 PbF

2 - Current rating (20 = 20 A) 3 - Circuit configuration C = Common cathode T = TO-220 5 - Schottky “Q” series 6 - Voltage rating 7 - PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free 1 - Vishay Semiconductors product Environmental digit VS-

Document Number: 95222 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 TO-220AB Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters and inches Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not in clude mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and (7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline D1 8.38 9.02 0.330 0.355  90° to 93° 90° to 93° D2 11.68 12.88 0.460 0.507 6 13 2 D Q 13 2 CC D D 3 x b23 x b (b, b2) b1, b3 (H1) Detail B C A B L Lead tip E Ø P

0.014 ABM M

0.015 A BMM

c AA A Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode Conforms to JEDEC outline TO-220AB (6) (6) (7) (6) (7) e 2 x L1 (2) Detail B Section C - C and D - D View A - A Base metal Plating (4) (4) c1c (6) Thermal pad (E) E1 (6)

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