1T417 SONY

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Super-small-miniature flat package
  • Low series resistance: 1.5 Ω Max. (f=470 MHz)
  • Large capacitance ratio: 15.5 Typ. (C 1/C25)
  • Small leakage current: 10 nA Max. (VR =25 V)
  • Capacitance deviation in a matching group: within 6 %

Applications

Electronic tuning of BS/CS tuners Structure Silicon epitaxial planar type diode Variable Capacitance Diode M-290 1T417 Electrical Characteristics (Ta=25 °C) Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol I R VR C 1 C 25 C 1/C25 rs Conditions VR =25 V IR =1 µA VR =1 V, f=1 MHz VR =25 V, f=1 MHz VR =5 V, f=470 MHz VR =1 to 25 V, f=1 MHz Min. Typ. Max. Unit 10 nA 30 V 7.8 8.6 9.4 pF 0.5 0.6 pF 13.0 15.5 1.30 1.50 Ω 6.0 %

— 2— 1T417 Example of Representative Characteristics 0.2 0.5 0.1 C -D iode capacitance (pF) VR -R everse voltage (V) 1 2 5 10 20 50 Forw ard voltage vs. Am bient tem perature 0.80 0.90 0.70 0.60 –20 VF-Forw ard voltage (V) Ta-Am bient tem perature (°C ) IF=1m A 0 20 40 60 80 R everse current vs. Am bient tem perature D iode capacitance vs. R everse voltage 1000 100 IR -R everse current (pA) Ta-Am bient tem perature (°C ) –20 0 20 40 60 80 R everse voltage vs. Am bient tem perature –20 VR -R everse voltage (V) Ta-Am bient tem perature (°C ) IR =10µA VR =25VTa=25°C 0 20 40 60 80

— 3— 1T417 D iode capacitance vs. Am bient tem perature 1.03 1.02 1.00 1.01 0.99 0.98 Ta-Am bient tem perature (°C ) –20 0 20 40 60 80 C (Ta)/C (25°C )-D iode capacitance R everse current vs. R everse voltage 100 0.1 VR -R everse voltage (V) 1 3 10 30 IR -R everse current (pA) VR =2V VR =1V VR =7V VR =15V VR =25V Tem perature coefficient of diode capacitance 1000 200 500 100 VR -R everse voltage (V) 1 5 102 20 50 Tem perature coefficient (ppm /°C ) Ta=80°C Ta=60°C Ta=25°C

b 1.7 ± 0.1 10° M AX c 0.8 ± 0.1 10° M AX 0.7 ± 0.1 c b 0.11 ± 0.005 0.3 ± 0.025 BASE M ETAL 0.11 – 0.01 0.3 – 0.02 W ITH PLATIN G + 0.05 + 0.05 M -290 0.2 ± 0.05 0.002g M -290 1.3 ± 0.1 M A 0.2 A Package Outline Unit : mm 1T417 — 4— Mark X71 2 1 : Cathode 2 : Anode