1T412 SONY

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Super-small-miniature flat package
  • Low series resistance: 1.8 Ω Max. (f=470 MHz)
  • Large capacitance ratio: 5.7 Typ. (C 2/C25)
  • Small leakage current: 10 nA Max. (VR =28 V)
  • Capacitance deviation in a matching group: within 5 %

Applications

Electronic tuning of BS tuners Structure Silicon epitaxial planar type diode Variable Capacitance Diode 1T412 M-290 Electrical Characteristics (Ta=25 °C) Item Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol I R C 2 C 25 C 2/C25 rs Conditions VR =28 V VR =2 V, f=1 MHz VR =25 V, f=1 MHz VR =1V, f=470 MHz VR =2 to 25 V, f=1 MHz Min. 3.27 0.57 5.0 Typ. 5.7 1.1 Max. 4.51 0.77 1.8 Unit nA pF pF Ω Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

—2— 1T412 12 5 1 0 2 0 5 0 0.1 0.2 0.5 Diode capacitance vs. Reverse voltage VR -Reverse voltage (V) C-Diode capacitance (pF) Ta=25°C 100 Reverse current vs. Ambient temperature –20 0 20 40 60 80 Ta-Ambient temperature (°C) IR-Reverse current (pA) 0.1 0.70 0.90 Forward voltage vs. Ambient temperature –20 0 20 40 60 80 Ta-Ambient temperature (°C) V F-Forward voltage (V) IF=1mA 0.80 0.60 Reverse voltage vs. Ambient temperature –20 0 20 40 60 80 Ta-Ambient temperature (°C) V R-Reverse voltage (V) VR =28V IR =10µA

—3— 1T412 – 2 0 02 04 06 08 0 0.98 0.99 1.00 1.01 1.02 1.03 Diode capacitance vs. Ambient temperature Ta-Ambient temperature (°C) C (Ta)/C (25°C)-Diode capacitance 100 Reverse current vs. Reverse voltage 1 3 10 30 VR -Reverse voltage (V) IR-Reverse current (pA) 0.1 VR =1V VR =2V VR =25V VR =15V 1000 Temperature coefficient of diode capacitance 12 5 1 0 VR -Reverse voltage (V) Temperature coefficient (ppm/°C) 20 50 500 200 100 Ta=80°C Ta=60°C VR =7V Ta=25°C

b 7}0. 10KMAX c 0.8}0.1 10KMAX 7}0. c b 0.11}0.005 0.3}0.025 BASE METAL 0.11|0.01 0.3|0.02 WITH PLATING {0.05 {0.05 M-290 2}0. 0.002g M-290 3}0. M A A —4— 1T412 Package Outline Unit : mm Mark X21 2 1 : Cathode 2 : Anode