1T409 SONY

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Super-small-miniature flat package
  • Low series resistance: 0.4 Ω Max. (f=470 MHz)
  • Large capacitance ratio: 2.5 Typ. (C 2/C10)
  • Small leakage current: 3 nA Max. (VR =15 V)

Applications

  • UHF-band VCO
  • Local oscillator for cordless telephone
  • Local oscillator for cellular equipment Structure Silicon epitaxial planar type diode Variable Capacitance Diode M-290 1T409 Electrical Characteristics (Ta=25 °C) Item Reverse current Diode capacitance Capacitance ratio Series resistance Symbol I R C 2 C 10 C 2/C10 rs Conditions VR =15 V VR =2 V, f=1 MHz VR =10 V, f=1 MHz VR =5V, f=470 MHz Min. 14.26 5.46 2.2 Typ. 2.5 0.3 Max. 15.96 6.46 0.4 Unit nA pF pF Ω

— 2— 1T409 1 2 5 10 20 50 100 D iode capacitance vs. R everse voltage VR -R everse voltage (V) C-Diode capacitance (pF) Ta=25°C R everse current vs. Am bient tem perature –20 0 20 40 60 80 Ta-Am bient tem perature (°C ) IR-Reverse current (pA) 0.1 0.70 0.90 Forw ard voltage vs. Am bient tem perature –20 0 20 40 60 80 Ta-Am bient tem perature (°C ) V F-Forward voltage (V) IF=1m A 0.80 0.60 R everse voltage vs. Am bient tem perature –20 0 20 40 60 80 Ta-Am bient tem perature (°C ) V R-Reverse voltage (V) VR =15V IR =10µA

— 3— 1T409 –20 0 20 40 60 80 0.98 0.99 1.00 1.01 1.02 1.03 D iode capacitance vs. Am bient tem perature Ta-Am bient tem perature (°C ) C (Ta)/C (25°C)-Diode capacitance 100 R everse current vs. R everse voltage 1 3 10 30 VR -R everse voltage (V) IR-Reverse current (pA) 10 0.1 VR =1V VR =2V VR =7V VR =10V 1000 Tem perature coefficient of diode capacitance 1 2 5 10 VR -R everse voltage (V) Tem perature coefficient (ppm /°C) 20 50 500 200 100 Ta=80°C Ta=60°C Ta=25°C

b 1.7 }0.1 KM AX c 0.8}0.1 10KMAX 0.7 }0.1 c b 0.11}0.005 0.3}0.025 BASE METAL 0.11|0.01 0.3|0.02 WITH PLATING {0.05 {0.05 M-290 0.2 }0.05 0.002g M-290 1.3 }0.1 M A 0.2 A Package Outline Unit : mm 1T409 — 4— Mark S91 2 1 : Cathode 2 : Anode