1T408 SONY

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Super-small-miniature flat package
  • Small series resistance 0.75Ω Max. (f = 470MHz)
  • Large capacitance ratio 11.7 Typ. (C 2/C25) 18.0 Typ. (C1/C28)
  • Small leakage current 10nA Max. (VR = 28V)
  • Capacitance deviation in a matching group: within 2%

Applications

Electronic tuning of wide-band CATV tuners Structure Silicon epitaxial planar-type diode Absolute Maximum Ratings (Ta = 25°C)

  • Reverse voltage V R 34 V
  • Operating temperature Topr –20 to +75 °C
  • Storage temperature Tstg –65 to +150 °C – 1 – 1T408 E97522-PS Variable Capacitance Diode Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. M-290 Item Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group IR C 2 C 25 C 2/C25 C 25/C28 rs VR = 28V VR = 2V, f = 1MHz VR = 25V, f = 1MHz C D = 14pF, f = 470MHz VR = 2 to 25V, f = 1MHz 11.7 29.46 2.49 11.0 1.03 35.46 2.89 0.75 nA pF pF Ω Symbol Conditions Typ. Min. Max. Unit Electrical Characteristics (Ta = 25°C)

– 2 – 1T408 Diode capacitance vs. Reverse voltage VR – Reverse voltage [V] C – Diode capacitance [pF] 215 2 0 10 50 100 Ta = 25°C VR = 28V Reverse current vs. Ambient temperature Ta – Ambient temperature [°C] IR – Reverse current [pA] –20 0 2 04 06 08 0 100 Forward voltage vs. Ambient temperature Ta – Ambient temperature [°C] V F – Forward voltage [V] –20 0.50 IF = 1mA 02 0 4 0 6 0 8 0 0.60 0.70 0.80 Reverse voltage vs. Ambient temperature Ta – Ambient temperature [°C] V R – Reverse voltage [V] –20 IR = 10µA 02 0 4 0 6 0 8 0 Example of Representative Characteristics

– 3 – 1T408 Diode capacitance vs. Ambient temperature Ta – Ambient temperature [°C] C [Ta] / C [25°C] – Diode capacitance –20 0.98 VR = 1V 02 0 4 0 6 0 8 0 0.99 1.01 1.03 1.00

1.02 VR = 2V

VR = 7V VR = 15V VR = 25V Reverse current vs. Reverse voltage VR – Reverse voltage [V] IR – Reverse current [pA] 31 0 5 0 100 1000 Ta = 80°C Ta = 60°C Ta = 25°C Temperature coefficient of diode capacitance VR – Reverse voltage [V] Temperature coefficient [ppm/°C] 21 0 52 0 5 0 100 200 500 1000

– 4 – 1T408 Package Outline Unit: mm SONY CODE EIAJ CODE JEDEC CODE PACKAGE MATERIAL LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING COPPER b 1.7 ± 0.1 10° MAX c 0.8 ± 0.1 10° MAX 0.7 ± 0.1 c b 0.11 ± 0.005 0.3 ± 0.025 BASE METAL 0.11 – 0.01 0.3 – 0.02 WITH PLATING + 0.05 + 0.05 M-290 0.2 ± 0.05 0.002g M-290 1.3 ± 0.1 M A 0.2 A