1T406 SONY

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Super-small-miniature flat package
  • Low series resistance: 1.0 Ω Max. (f=470 MHz)
  • Large capacitance ratio: 15.5 Typ. (C 2/C25)
  • Small leakage current: 10 nA Max. (VR =28 V)
  • Capacitance deviation in a matching group: within 2 %

Applications

Electronic tuning of wide-band CATV tuners Structure Silicon epitaxial planar type diode Variable Capacitance Diode 1T406 M-290 Electrical Characteristics (Ta=25 °C) Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol I R VR C 2 C 25 C 2/C25 rs Conditions VR =28 V IR =1 µA VR =2 V, f=1 MHz VR =25 V, f=1 MHz C D =14 pF, f=470 MHz C 2 to C25, f=1 MHz Min. 39.46 2.56 14.5 Typ. 15.5 Max. 47.36 2.99 1.0 Unit nA V pF pF Ω Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

—2— 1T406 12 5 1 0 2 0 5 0 100 Diode capacitance vs. Reverse voltage VR -Reverse voltage (V) C-Diode capacitance (pF) Ta=25°C 100 Reverse current vs. Ambient temperature –20 0 20 40 60 80 Ta-Ambient temperature (°C) IR-Reverse current (pA) VR =28V 0.60 0.80 Forward voltage vs. Ambient temperature –20 0 20 40 60 80 Ta-Ambient temperature (°C) V F-Forward voltage (V) IF=1mA 0.70 0.50 Ta-Ambient temperature (°C) Reverse voltage vs. Ambient temperature –20 0 20 40 60 80 V R-Reverse voltage (V) IR =10µA

—3— 1T406 1.01 1.03 Diode capacitance vs. Ambient temperature –20 0 20 40 60 80 Ta-Ambient temperature (°C) C (Ta)/C (25°C )-Diode capacitance VR =1V 1.02 1.00 0.99 0.98 VR =2V VR =7V VR =25V VR =15V 100 Reverse current vs. Reverse voltage 1 3 10 30 VR -Reverse voltage (V) IR-Reverse current (nA) 0.1 Ta=80°C Ta=60°C Ta=25°C 1000 Temperature coefficient of diode capacitance 12 5 1 0 VR -Reverse voltage (V) Temperature coefficient (ppm/°C) 20 50 500 200 100

b 1.7 ± 0.1 10° MAX c 0.8 ± 0.1 10° MAX 0.7 ± 0.1 c b 0.11 ± 0.005 0.3 ± 0.025 BASE METAL 0.11 – 0.01 0.3 – 0.02 WITH PLATING + 0.05 + 0.05 M-290 0.2 ± 0.05 0.002g M-290 1.3 ± 0.1 M A 0.2 A —4— 1T406 Package Outline Unit : mm Mark 1 : Cathode 2 : Anode12