1T387 SONY

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Super miniature package
  • Low series resistance: 1.5Ω Max. (f = 470MHz)
  • Large capacitance ratio: 14.6 Typ. (C 1/C25)
  • Small leakage current: 10nA Max. (VR = 25V)
  • Capacitance deviation in a matching group: within 6%

Applications

Electronic tuning of BS and CS tuners Structure Silicon epitaxial planar type diode Absolute Maximum Ratings(Ta = 25°C)

  • Reverse voltage V R 30 V
  • Peak reverse voltage VRM 35 V (RL ‡ 10kΩ )
  • Operating temperature Topr –20 to +75 °C
  • Storage temperature Tstg –65 to +150 °C – 1 – E00421-PS Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. 1T387 M-235 Electrical Characteristics (Ta = 25°C) Reverse voltage Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group V R IR C 1 C 25 C 1/C25 rs IR = 1µA VR = 25V VR = 1V, f = 1MHz VR = 25V, f = 1MHz VR = 5V, f = 470MHz VR = 1 to 25V, f = 1MHz 30.0 7.84 0.54 12.2 14.6 1.30 10.0 9.44 0.64 1.50 6.0 V nA pF pF Ω UnitMax.Typ.Min.ConditionsSymbolItem

– 2 – 1T387 IF = 1m A 1 10 0.1 D iode capacitance vs. R everse voltage VR – R everse voltage [V] C – Diode capacitance [pF] Ta – Am bient tem perature [°C ] Forw ard voltage vs. A m bient tem perature V F – Forward voltage [V] –20 0 20 40 60 100 1000 R everse current vs. A m bient tem perature Ta – Am bient tem perature [°C ] IR – Reverse current [pA] 0.90 0. 80 0.70 0.60 –20 0 20 40 60 80 IR = 10µA Ta – Am bient tem perature [°C ] R everse voltage vs. A m bient tem perature V R – Reverse voltage [V] 45 –20 0 20 40 60 80 VR = 25V 0.2 0.5 2 5 20 50

– 3 – 1T387 –20 200 40 60 0.98 0.99 1.00 VR = 1V VR = 2V VR = 7V VR = 25V VR = 15V 1.01 1.02 1.03 D iode capacitance vs. A m bient tem perature Ta – Am bient tem perature [°C ] C (Ta)/C (25°C) – Diode capacitance VR – R everse voltage [V] Tem perature coefficient of diode capacitance Tem perature coefficient [ppm /°C] 1 3 10 30 0.1 100 R everse current vs. R everse voltage VR – R everse voltage [V] IR – Reverse current [pA] 1000 500 200 100 1 2 5 10 20 50 Ta = 25°C Ta = 60°C Ta = 80°C

– 4 – 1T387 SO N Y C O D E EIAJ C O D E JED EC C O D E PAC KAG E W EIG H T /LiteDiagLines /LiteDiagLines /LiteDiagLines /LiteDiagLines /LiteDiagLines /LiteDiagLinesM -235 ∗1.25 + 0.2 – 0.1 0.3 + 0.1 – 0.05 ∗1.7 ± 0.1 2.5 ± 0.2 0.3 + 0.1 – 0.05 ∗0.9 ± 0.1 0.2 0 ± 0.05 0° to 10° 0.11 + 0.1 – 0.06 M -235 0.1g N O TE: D im ension “∗” does not include m old protrusion. Package Outline Unit: mm Marking B C ATH O D E M AR K N ote B: Lot N o. (Year and M onth of m anufacture) Year; Last one digit M onth; A, B, C (for O ct. to D ec.) 1 to 9 (for Jan. to Sept.) Sony Corporation