1T368A SONY

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Super miniature package
  • Low series resistance: 0.75Ω Max. (f = 470MHz)
  • Large capacitance ratio: 11.5 Typ. (C 2/C25)
  • Small leakage current: 10nA Max. (VR = 28V)
  • Capacitance deviation in a matching group: within 2%

Applications

Electronic tuning of wide-band CATV tuners Structure Silicon epitaxial planar type diode Absolute Maximum Ratings(Ta = 25°C)

  • Reverse voltage V R 34 V
  • Operating temperature Topr –20 to +75 °C
  • Storage temperature Tstg –65 to +150 °C – 1 – E99804-PS Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. 1T368A M-235 Electrical Characteristics (Ta = 25°C) Reverse voltage Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group VR IR C 2 C 25 C 2/C25 C 25/C28 rs IR = 1µA VR = 28V VR = 2V, f = 1MHz VR = 25V, f = 1MHz C D = 14pF, f = 470MHz VR = 2 to 25V, f = 1MHz 34.0 29.54 2.64 11.0 1.03 11.5 10.0 33.54 2.94 0.75 2.0 V nA pF pF Ω UnitMax.Typ.Min.ConditionsSymbolItem

– 2 – 1T368A 1 2 5 10 20 50 100 D iode capacitance vs. R everse voltage VR – R everse voltage [V] C – Diode capacitance [pF] Ta = 25°C 100 100 R everse current vs. A m bient tem perature –20 0 20 40 60 80 Ta – Am bient tem perature [°C ] IR – Reverse current [pA] VR = 28V 0.60 0.80 Forw ard voltage vs. A m bient tem perature –20 0 20 40 60 80 Ta – Am bient tem perature [°C ] V F – Forward voltage [V] IF = 1m A 0.70 0.50 Ta – Am bient tem perature [°C ] R everse voltage vs. A m bient tem perature –20 0 20 40 60 80 V R – Reverse voltage [V] IR = 10µA

– 3 – 1T368A 1.01 1.03 D iode capacitance vs. A m bient tem perature –20 0 20 40 60 80 Ta – Am bient tem perature [°C ] C (Ta)/C (25°C) – Diode capacitance VR = 1V 1.02 1.00 0.99 0.98 VR = 2V VR = 7V VR = 25V VR = 15V 100 R everse current vs. R everse voltage 1 3 10 30 VR – R everse voltage [V] IR – Reverse current [pA] 10 0.1 Ta = 80°C Ta = 60°C Ta = 25°C 1000 Tem perature coefficient of diode capacitance 1 2 5 10 VR – R everse voltage [V] Tem perature coefficient [ppm /°C] 20 50 500 200 100

– 4 – 1T368A SO N Y C O D E EIAJ C O D E JED EC C O D E PAC KAG E W EIG H T /LiteDiagLines /LiteDiagLines /LiteDiagLines /LiteDiagLines /LiteDiagLines /LiteDiagLinesM -235 ∗1.25 + 0.2 – 0.1 0.3 + 0.1 – 0.05 ∗1.7 ± 0.1 2.5 ± 0.2 0.3 + 0.1 – 0.05 ∗0.9 ± 0.1 0.2 0 ± 0.05 0° to 10° 0.11 + 0.1 – 0.06 M -235 0.1g N O TE: D im ension “∗” does not include m old protrusion. Package Outline Unit: mm Marking B C ATH O D E M AR K N otes 1) B: Lot N o. (Year and M onth of m anufacture) Year; Last one digit M onth; A, B, C (for O ct. to D ec.) 1 to 9 (for Jan. to Sept.)