1T06E-D NELLSEMI

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Technical content

www.nellsemi.com Page 1 of 5 SEMICONDUCTOR 1T Series RoHS RoHS TRIACs, 1AStandard TO-92 (1TxxE) MAIN FEATURES SYMBOL VALUE UNIT IT(RMS) V /VDRM RRM IGT(Q1) 1 A V mA3 to 25 600 to 800 SYMBOL IT(RMS) 1TO-92 ITSM Non repetitive surge peak on-state A I t2 1.28 2A s dI/dt 50 IGM 1 PG(AV) 1 PGM - 40 to + 150 ºC A/µs A A W UNITVALUE 17.6 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F =100 Hz T =125ºCj T =125ºCj T =125ºCj T =20 µsp Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS T = 110ºCc

FEATURES

APPLICATIONS

On-state RMS current, l =1AT(RMS) Repetitive peak off-state voltage, V /V = 600 or 800VDRM RRM Triggering gate current, l 3 to 25 mAGT (Q1) The 1T series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Different gate current sensitivities are available, allowing optimized performance when driven directly through microcontrollers Tstg - 40 to + 125 5Peak gate power dissipation Average gate power dissipation Peak gate current RMS on-state current (full sine wave) current (full cycle, T initial = 25°C)j 2l t Value for fusing Critical rate of rise of on-state current l = 2xl , t ≤100nsG GT r Stroage temperature range Operating junction temperature range T =125ºCj G

www.nellsemi.com Page 2 of 5 I - II - III IV MAX. 10 mA ALL ALL MAX. I - III - IV MAX. mA II MIN. MIN. R (2)D MAX. IDRM IRRM V = VD DRM MAX. Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. QUADRANT 1Txxxx V = 12 V, R = 30ΩD L V = V , R = 3.3KΩ, D DRM L T = 125°Cj I = 50 mAT I = 1.2 IG GT V = 67% V , gate open, T = 110°CD DRM j (dI/dt)c = 0.44 A/ms, T = 110°Cj 1.3 0.2 V V mA V/µs V/µs Dynamic resistance T = 125°Cj T = 25°Cj T = 125°Cj 400 500 µA STATIC CHARACTERISTICS UNITVALUE UNITTEST CONDITIONS TEST CONDITIONS SYMBOL SYMBOL Standard (4 quadrants) I (1)GT VGT VGD (2)IH (2)dV/d t IL (2)(dV/dt)c SEMICONDUCTOR 1T Series RoHS RoHS S (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS T 0.5 D 100 A VR = VRRM 1 5 STATIC CHARACTERISTICS UNITVALUETEST CONDITIONS SYMBOL V (2)TO MAX.Threshold voltage T = 125°Cj 0.95 V V (2)TM MAX.I = 2A, TM t = 380 µsP T = 25°Cj 1.50 mΩ THERMAL RESISTANCE Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient °C/W UNITVALUESYMBOL TO-92 60 TO-92 150 PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY PACKAGE 600 V 3 mA 5 mA 10 mA 25 mA 1000 V TYPE TO-92 TO-92 TO-92 TO-92Standard StandardV V V V V VV V 800 V V V V V1TxxE-T 1TxxE-D 1TxxE-S 1TxxE-A Standard Standard

ORDERING INFORMATION

Note: xx = voltage, y = sensitivity 1TxxE-y 1TxxE-y ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-92 0.2g 500 Bag

www.nellsemi.com Page 3 of 5 ORDERING INFORMATION SCHEME Triac series Current Voltage 1 = 1A 06 = 600V 08 = 800V T = 3mA Standard D = 5mA Standard

1 T 06 E - D

E = TO-92 SEMICONDUCTOR 1T Series RoHS RoHS I Sensitivity GT S = 10mA Standard A = 25mA Standard 0.00 0.25 0.50 0.75 1.00 1.25 1.50 P (W) I (A)T(RMS) 125100755025 Fig.3 On-state RMS current versus ambient temperature (free air convection full cycle) Fig.4 Relative variation of thermal impedance versus pulse duration (Z ).th(j-a) 0.0 1E-3 K=[Z /R ]th(j-a) th(j-a) 1E+31E+21E+11E+01E-11E-20 25 50 75 100 125 I (A)T(RMS) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 Fig.2 On-state RMS current versus lead (TO-92) or tab (SOT-223, SMBflat-3L) temperature (full cycle) Fig.1 Maximum power dissipation versus on-state RMS current (full cycle) 1.00.4 180° α α I (A)T(RMS) TO-92 T or T (°C)l tab T (°C)amb R = 150°C/Wth(j-a) (TO-92) 0.01 0.10 1.00 t (s)P TO-92

www.nellsemi.com Page 4 of 5 SEMICONDUCTOR 1T Series RoHS RoHS Fig.5 Relative variation of holding current and latching current versus junction temperature (typ. values) Fig.6 Relative variation of gate trigger current (l ) GT and voltage(V ) versus junction temperatureGT -50 -25 0 25 12510075 0.0 0.5 1.0 1.5 2.0 2.5 Fig.9 On-state characteristics (maximum values) (l = f(V ))TM TM Fig.10 Relative variation of critical rate of of main current versus decrease (dV/dt)c Fig.7 Surge peak on-state current versus number of cycles Fig.8 Non-repetitive surge peak on-state current 2 and corresponding value of l t sinusoidal pulse width l ,l [T ] / l ,l [T =25°C]H L j H L j (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0.1 1.0 10.0 100.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Fig.11 Relative variation of critical rate of decrease of main current (dl/dt) versus junction temperature (dl/dt)c [T ] / (dl/dt)c [T Specified]j j Fig.12 Relative variation of static dV/dt immunity versus junction temperature (gate open) Tj(°C) lL lH l ,V [T ] / l ,V [T =25°C]GT GT j GT GT j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 1251007550 l (A)TSM T initial=25°Cj Repetitive T =95°Camb Number of cycles Non repetitive t=20ms One cycle 1 10 100 1000 l Q1-Q2GT l Q3GT l Q4GT V Q1-Q2-Q3-Q4GT 100 0.01 0.10 1.00 10.00 dl/dt limitation: 20A/µs t (ms)P 2 2l (A), l t(A s)TSM T initial = 25°Cj lTSM 2 l t 0 25 50 75 100 125 Tj(°C) 10.0 1.0 0.1 T = max.j V = 0.95Vto R = 400mΩd T = j T max.j T = 25°Cj V (V)TM 0.0 2.6 T D S A (dV/dt)c (V/µs) (dV/dt)c [T ] / (dV/dt)c [T = 125°C]j j 25 50 75 100 125 Tj(°C) l (A)TM V =V =402VD R

SEMICONDUCTOR 1T Series RoHS RoHS www.nellsemi.com Page 5 of 5 RoHS 5.20(0.205) 4.45(0.175) TO-92 Case Style 5.33(0.210) 4.58(0.180) 0.50(0.020) 0.40(0.016) 0.50(0.020) 0.40(0.016) 0.50(0.020) 0.40(0.016) 1.40(0.055) 1.14(0.045) 1.40(0.055) 1.14(0.045) 4.20(0.165) 3.20(0.126) 12.70(0.500)Min. 1 2 3 Ø