1SV128 TOSHIBA
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE VHF~UHF BAND RF ATTENUATOR APPLICATIONS. Unit in mm +05 « Small Package zstas +025 + Small Total Capcitance : Cp=0.25pF (Typ.) ar EA $7 a + 9 3 3 #3 al I |e _ 5 Ex “ » 2 ssf +4 MAXIMUM RATINGS (Ta = 25°C) FE} 1 Ll CHARACTERISTIC | SYMBOL . 1, ANODE 3. CATHODE Forward Current Junction Temperature JEDEC — Storage Temperature Range —55~125 ELIAS SC-59 TOSHIBA 1-3G1B Weight : 0.012g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | wan. | rye. [max. |unrr] Forward Voltage Tp=50mA\\ | — |o95| — | v | otal Capacitance VR=60V, f=1MHz | — [o25| — | vr | Ip=10mA, f= 100MHz [=| 7} -] ao | Minority Carrier Life Time Ip=10mA. Ip=6mA [| — | 400] — | ns | Marking 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property Or other rights of the third parties which may result from Its use. ‘NO license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-05-08 1/2
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