1SS400TE61 LITTELFUSE

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Switching Diode 1SS400 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High speed switching Features 1)Ultra small mold type. (UMD2) 2)High reliability Construction Silicon epitaxial planar Structure Absolute maximum ratings (Ta=25C) Symbol Unit VRM V VR V IFM mA Io mA Isurge mA Tj C Tstg C Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - - 1.2 V IF=100mA Reverse current IR - - 0.1 μA VR=80V Ct - - 3 pF VR=0.5V , f=1MHz trr - - 4 ns VR=6V , IF=10mA , RL=100ΩReverse recovery time Taping dimensions (Unit : mm) Parameter Capacitance between terminals Junction temperature 125 Storage temperature 55 to 125 Average rectified forward current 100 Surge current(t=1s) 500 Reverse voltage (DC) 80 Forward voltage(repetitive peak) 225 Parameter Limits Reverse voltage (repetitive) 90 EMD2 0.8 1.7 0.6 0.95±0.06 4.0±0.1 3.5±0.05 1.75±0.1 8.0±0.15 0.2±0.05 0.76±0.05 1.26±0.05 φ0.5 0.6 2.0±0.05 1.3±0.06 2.45±0.1 空ポケット 0.2 Empty pocket ROHM : EMD2 JEITA : SC-79 JEDEC :SOD-523 dot (year week factory) 0.12±0.05 0.6±0.1 0.3±0.05 0.8±0.05 1.2±0.05 1.6±0.1 1/2 2011.06 - Rev.D

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet 1SS400 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 1ms IM=1mA IF=10mA 300us time Mounted on epoxy board 0.1 100 0.1 1 10 100 t Ifsm 0.1 100 1 10 100 8.3m Ifsm 1cyc 8.3m 8.3ms Ifsm 1cyc 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 100 900 910 920 930 940 950 0.1 0 5 10 15 0.1 100 1000 10000 100000 0 20 40 60 80 100 120 Ta=125℃ Ta=25℃ Ta=25℃ Ta=75℃ 0.01 0.1 100 Ta=25℃ Ta=125℃ Ta=75℃ Ta=25℃ FORWARD VOLTAGE : VF(V) VF-IF CHARACTERISTICS FORWARD CURRENT : IF(mA) REVERSE CURRENT : IR(nA) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE : VF(mV) REVERSE CURRENT : IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISPERSION MAP PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT : IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP f=1MHz AVE:930.3mV Ta=25℃ IF=100mA n=30pcs Ta=25℃ VR=80V n=30pcs AVE:12.47nA AVE:0.698pF Ta=25℃ VR=0.5V f=1MHz n=10pcs AVE:4.05A AVE:1.20ns Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs AVE:6.43kV C=100pF R=1.5kΩ C=200pF R=0Ω AVE:1.58kV 2/2 2011.06 - Rev.D

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes