1SS400GT2R LITTELFUSE
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Switching Diode 1SS400G Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High speed switching Features 1)Ultra small mold type.（VMD2） 2)High reliability Construction Silicon epitaxial planer Structure Absolute maximum ratings (Ta=25C) Symbol Unit VRM V VR V IFM mA Io mA Isurge mA Tj C Tstg C Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - - 1.2 V IF=100mA IR - - 100 nA VR=80V Ct - - 3.0 pF VR=0.5V f=1.0MHz Trr - - 4.0 ns VR=6V IF=10mA RL＝100Ω Capacitance between terminal Reverse recovery time Storage temperature 55 to 150 Parameter Reverse current Surge current (1S) 500 Junction temperature 150 Forward current (repetitive peak) 225 Average rectified forward current 100 Reverse voltage (repetitive peak) 90 Reverse voltage (DC) 80 Taping dimensions (Unit : mm) Parameter Limits VMD2 ROHM : VMD2 dot (year week factory) 0.5 1.2 0.5 0.13±0.03 0.5±0.050.27±0.03 0.6±0.05 1.0±0.05 1.4±0.05 0.76±0.1 4±0.1 3.5±0.05 1.75±0.1 8.0±0.3 0.1 0.18±0.05 0.65±0.05 φ0.5 0.4 2±0.05 0.3 1.11±0.05 2.1±0.1 1/4 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet 1SS400G 0.1 100 1000 0 500 1000 1500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) Tj=125°C Tj=25°C Tj=150°C Tj=75°C 100 1000 10000 100000 0 20 40 60 80 Tj=125°C Tj=25°C Tj=150°C Tj=75°C REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0.1 0 5 10 15 20 25 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS f=1MHz Tj=25°C 850 860 870 880 890 900 910 920 930 940 950 VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) AVE:891.2mV Tj=25°C IF=0.1A n=30pcs 100 REVERSE CURRENT:IR(nA) IR DISPERSION MAP Tj=25°C VR=80V n=30pcs AVE:22.17nA 0.2 0.4 0.6 0.8 AVE:0.595pF Ta=25°C f=1MHz VR=0.5V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP 2/4 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet 1SS400G AVE:3.9A 8.3ms IFSM 1cyc IFSM DISPERSION MAP ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 0.5 1.5 AVE:1.49ns Ta=25°C VR=6V IF=10mA RL=100Ω n=10pcs trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 100 1 10 100 8.3ms IFSM 1cyc. 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 10 100 time IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS C=200pF R=0Ω C=100pF R=1.5kΩ AVE：1.60kV AVE：6.48kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 3/4 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet 1SS400G 0.05 0.1 0.15 0.2 0 25 50 75 100 125 150 D.C. D=1/2 Sin(θ＝180) 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 0.05 0.1 0.15 0.2 D.C. D=1/2 Sin(θ＝180) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.002 0.004 0.006 0 10 20 30 40 50 60 70 80 D.C. D=1/2 Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) T Tj=150°C D=t/T t VR Io VR=40V 4/4 2011.10 - Rev.A
R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes