1SS396 TOSHIBA
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING Unit in mm 2stb3 1sto38 © Low Forward Voltage : Vp (3)=0.54V (Typ.) <8 sl ss © Low Reverse Current : IR=5yA (Max.) « | | "3 © Small Package : SC-59 a} ° _ Fe ch MAXIMUM RATINGS (Ta = 25°C) Ag CHARACTERISTIC SYMBOL RATING UNIT so 3 Maximum (Peak) Reverse Voltage + Maximum (Peak) Forward Current | pm | 300" | ma || 2 1. ANODE 1 3. ANODE 2, [Storage Temperature Range | Tay | —06~125 | co _|L = ar Storage Temperature Range Tstg —55~125 °C TOSHIBA 13G1G Operation Temperature Range —40~100 - Weight : 0.012g * : Unit Rating. Total Rating=Unit RatingXx0.7 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | aa. | rye. [wax. [unr] MARKING @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-05-07 1/2
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100 Cr-VR P-Ta
Ml ====2=2====—===—=== FEET TT eT tt et & 30} 2 aN pA e ENE ew} Z = a % 80] NJ lm. 8 g *ECCEEEC EERE 3 a LEE EE N y 4 8 12 16 20 24 28 92 36 aan LPT TIEN REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta (°C) 1997-05-07 2/2