1SS381 TOSHIBA
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TOSHIBA 1$$381 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS Unit in mm @ = Small Package 0.6 . £01 @ Small Total Capacitance —: Cp = 1.2 pF (Max.) zg ie @ Low Series Resistance tg = 0.60 (Typ.) = 5 a fe MAXIMUM RATINGS (Ta = 25°C 03 0.13 CHARACTERISTIC SYMBOL | RATING | UNIT 08201 Reverse Voltage [Vve__[ 30 | v_] - Storage Temperature Range —55~125 JEDEC - TOSHIBA 1-1G1A Weight : 0.0014g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Forward Voliage Tp= mA [= [= os VR=15V L— [= ot | a Reverse Voltage [Va lig =i pA [x p—|— fv] Total Capacitance VR = 6V, f= Me [= [or [a3 [oF | [Series Resistance | 15 Ip = 2 mA, f= 100 Miz [= Tos Tost a] MARKING CO a= 961001544 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent’ products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-03-30 1/2
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