1SS356TW11 LITTELFUSE

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www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. Band Switching Diode 1SS356 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High frequency switching Features 1)Ultra small mold type. (UMD2) 2)High reliability Construction Silicon epitaxial planar Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Symbol Unit IF mA VR V Tj °C Tstg °C Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - - 1.0 V IF=10mA Reverse current IR - - 10 nA VR=25V Ct - - 1.2 pF VR=6V , f=1MHz rf - - 0.9 Ω IF=2mA , f=100MHz Parameter Limits Forward current (DC) 100 55 to 125 Reverse voltage (DC) 35 Junction temperature 125 Parameter Capacitance between terminals Forward operating resistance Storage temperature UMD2 2.1 0.8MIN. 0.9MIN. 2.75 3.5±0.05 1.75±0.1 8.0±0.2 0.3±0.1 1.0±0.1 2.8±0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC : SOD-323 dot (year week factory) 0.3±0.05 0.7±0.2 0.1 0.1±0.1 0.05 1.7±0.1 2.5±0.2 1.25±0.1 1/3 2011.08 - Rev.D

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet 1SS356 100 0.1 1 10 100 11 0 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 AVE:0.807pF Ta=25℃ VR=6V f=1MHz n=10pcs 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 Ta=25℃ VR=25V n=30pcs AVE:0.0116nA 800 810 820 830 840 850 0.1 0.01 0.1 1 10 f=100MHz 0.1 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 0 1 02 03 04 05 0 Ta=125℃ Ta=25℃ Ta=25℃ Ta=75℃ 0.001 0.01 0.1 100 Ta=25℃ Ta=125℃ Ta=75℃ Ta=25℃ FORWARD VOLTAGE : VF(V) VF-IF CHARACTERISTICS FORWARD CURRENT : IF(mA) REVERSE CURRENT : IR(nA) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE : VF(mV) REVERSE CURRENT : IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT : IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) FORWARD CURRENT : IF(mA) rf-IF CHARACTERISTICS FORWARD OPERATING RESISTANCE:rf(Ω) f=1MHz AVE:0.833V Ta=25℃ IF=10mA n=30pcs AVE:5.60A AVE:1.20ns Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs FORWARD CURRENT : IF(mA) rf DISPERSION MAP FORWARD OPERATING RESISTANCE:rf(Ω) AVE:0.602Ω Ta=25℃ f=100MHz IF=2mA n=10pcs 8.3ms Ifsm 1cyc 8.3ms Ifsm 1cyc 8.3ms t Ifsm 2/3 2011.08 - Rev.D

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet 1SS356 AVE:0.88kV C=200pF R=0Ω C=100pF R=1.5kΩ AVE:6.63kV 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) ELECTROSTATIC DDISCHARGE TEST ESD(KV) ESD DISPERSION MAP 1ms IM=10mA I F=100mA 300us time Mounted on epoxy board 3/3 2011.08 - Rev.D

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