1SS313 TOSHIBA
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- Manufacturer or author: Provided By digicamel.com
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TOSHIBA 1$$313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. Unit in mm 21401 « Small Package. 1.25401 * Small Total Capacitance : Cp=1.2pF (Max.) cH + al x) 3 S| + Low Series Resistance : rg=0.6 (Typ.) a] SS S| a 2 3 MAXIMUM RATINGS (Ta = 25°C) it CHARACTERISTIC SYMBOL UNIT 3 = $s Reverse Voltage [ ve [| 2% [vf] 2, "3 §| S| 5 Forward Current x i Storage Temperature Range —55~125 1. CATHODE 2. CATHODE 3. ANODE JEDEC - EIAS SC-70 TOSHIBA 1-2P1A Weight : 0.006g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [ way. | rye. [max. unr] Forward Voltage Ip=2mA | — | — Joss] v | [Reverse Current [IR [Va=18V [= | = | os] pa | Total Capacitance VR=6V, f= 1MHa | — [os | 12] or | [Series Resistance rtp =2mA, £=100MH2 | — [os [os] a | Marking 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsiblity is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property oF other rights of the third parties which may result trom Its use. No license’ Is granted By implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice. 1997-05-08 1/2
rs — Ip Cr - VR TTT se. J CTT =] _ f=100MHz gq f=1MHz é & : & 8 8 a 2 {= a a a a a BC s [> 3 a a a s ee a 2 p “J yy & re ee ee ee | 2 of —1 oS 2 of —| | TTT | es a a | Be LT | Titi w | TIT | ot | | TTT 1 3 3 10 20 v 3 8 10 20 FORWARD CURRENT Ip (mA) REVERSE VOLTAGE VR (V) 10% ee =z a ee ee ee ee ee eee = Ferrer rrr rrr © Lt & a a a Prrrprrrrrrerr) San BE 2 a a a A a a LLL TT TTT YT TT I 0 04 08 12 16 20 24 28 FORWARD VOLTAGE Vp (V) 1997-05-08 2/2