1SS303 NEC

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© 1987 SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE DATA SHEET Document No. D16308EJ2V0DS00 (2nd edition) (Previous No. DC-2100) Date Published July 2002 NS CP(K) Printed in Ja pan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

FEATURES

  • Low capacitance: Ct = 2.5 pF TYP.
  • High speed switching: trr = 4.0 ns MAX.
  • Wide applications including switching, limitter, clipper.
  • Double diode configuration assures economical use. ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (TA = 25°C) Peak Reverse Voltage V RM 75 V DC Reverse Voltage V R 50 V Surge Current (1 µs) Note IFSM 6.0 A Surge Current (1 µs) I FSM 4.0 A Peak Forward Current Note IFM 450 mA Peak Forward Current I FM 300 mA Average Rectified Current Note IO 150 mA Average Rectified Current I O 100 mA Maximum Temperatures Junction Temperature T j 150 °C Storage Temperature Range T stg –55 to + 150 °C Thermal Resistance Junction to Ambient Note Rth(j-a) 1.0 °C/mW Junction to Ambient R th(j-a) 0.85 °C/mW Note Both diodes loaded simultaneously. ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VF1 IF = 10 mA 0.72 1.0 V VF2 IF = 50 mA 0.88 1.1 V Forward Voltage VF3 IF = 100 mA 1.0 1.2 V Reverse Current I R VR = 50 V 0.1 µA Capacitance C t VR = 0 V, f = 1.0 MHz 2.5 4.0 pF Reverse Recovery Time t rr See Test Circuit. 4.0 ns PACKAGE DIMENSIONS (Unit: mm) 2.1±0.1 1.25±0.1 2.0±0.20.9±0.1 Marking 0.3+0.1 −00.15+0.1 −0.05 0.3 0.65 0 to 0.1 0.3 0.65 +0.1 CONNECTION DIAGRAM (Top View) 1. Cathode 2. Cathode 3. Anode Marking : A4

TYPICAL ELECTRICAL CURVES (TA = 25°C) FORWARD CURRENT vs. FORWARD VOLTAGE VF - Forward Voltage - V 0.1 0.2 0.5 100 IF - Forward Current - mA TERMINAL CAPACITANCE vs. REVERSE VOLTAGE VR - Reverse Voltage - V 0.5 1 2 5 10 20 50 100 0.1 0.2 0.5 C t - Terminal Capacitance - pF REVERSE CURRENT vs. REVERSE VOLTAGE VR - Reverse Voltage - V 01 0 2 0 3 0 4 0 5 0 0.2 0.5 100 IR - Reverse Current - µA REVERSE RECOVERY TIME vs. FORWARD CURRENT IF - Forward Current - mA 0 20 40 60 80 100 trr - Reverse Recovery Time - ns

Data Sheet D16308EJ2V0DS 3 1SS303 REVERSE RECOVERY TIME (trr) TEST CIRCUIT Pulse Generator (50 Ω ) Sampling Oscilloscope (50 Ω ) DC Source Trigger 0.02 µF D.U.T. 3 kΩ+ − IF = 10 mA, VR = 6.0 V, RL = 100 Ω irr = 0.1• Ir Input Voltage Waveform to Diode Output Current Waveform in Diode V F IF VR Ir trr 0.1 Ir

M8E 00. 4 The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).