1SS226-3 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Low forward voltage :VF(3) = 0.9 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance :CT = 0.9pF(Typ.) 1 2 Switching Diodes ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Reverse voltage VRM 85 DC Blocking Voltage VR 80 Average Rectified Output Current Io 100 Peak forward surge current IFM 300 Power Dissipation PD 150 mW Junction Temperature TJ 150 Storage temperature range Tstg -55 to 150 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 80 VF1 IF= 1 mA 0.6 VF2 IF= 10mA 0.72 VF3 IF= 100 mA 0.9 1.2 IR1 VR=30 V 0.1 IR2 VR=80 V 0.5 Capacitance between terminals CT VR= 0 V, f= 1 MHz 0.9 3 pF Reverse recovery time trr IF=10mA 1.6 4 ns Forward voltage Reverse voltage leakage current uA V ■ Marking NO. 1SS26 Marking C3 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
www.kexin.com.cn2 Diod es Switching Diodes 1SS226 ■ Typical Characterisitics