1SR154-400TE25A LITTELFUSE

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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Rectifier diode 1SR154-400 Applications Land size figure (Unit : mm) General rectification Features 1)Small power mold type(PMDS) 2)High Reliability Construction Silicon diffused junction Structure Absolute maximum ratings (Ta=25C) Symbol Unit VRMS V VR V Io A IFSM A Tj C Tstg C Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - - 1.1 V IF=1A Reverse current IR - - 10 uA VR=400V Storage temperature 55 to 150 Parameter Dimensions (Unit : mm) Forward current surge peak （60Hz/1cyc） 30 Junction temperature 150 Reverse voltage (repetitive peak) 400 Average rectified forward current 1 Taping dimensions (Unit : mm) Parameter Limits Reverse voltage (non-repetitive peak) 500 PMDS 2.0 4.2 2.0 4.0±0.12.9±0.1 4.0±0.1 2.0±0.05 φ1.55±0.05 5.5±0.05 1.75±0.1 12±0.2 φ1.55 9.5±0.1 0.3 5.3±0.1 0.05 2.8MAX ROHM : PMDS JEDEC : SOD-106 ᶃ Manufacture Dateᶄ 0.1ʶ0.02 ɹ ɹ ɹ 0.1 2.0ʶ0.2 5.0ʶ0.2 1.2ʶ0.3 2.6ʶ0.15 4.5ʶ0.2 1.5ʶ0.2 1 4 ᶃ ᶄ ROHM : PMDS JEDEC : SOD-106 ᶃ Manufacture Dateᶄ 0.1ʶ0.02 ɹ ɹ ɹ 0.1 2.0ʶ0.2 5.0ʶ0.3 1.2ʶ0.3 2.6ʶ0.2 4.5ʶ0.2 1.5ʶ0.2 1 4 ᶃ ᶄ 1/3 2011.06 - Rev.E

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet 1SR154-400 Electrical characteristic curves (Ta=25C) 0.5 1.5 2.5 AVE:1.597us Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 150 AVE:64.0A 100 AVE:25.8pF Ta=25℃ f=1MHz VR=0V n=10pcs 100 150 200 250 300 350 400 450 500 920 930 940 950 960 970 0.1 100 1000 10000 100000 0 100 200 300 400 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=150℃ 0.001 0.01 0.1 0 200 400 600 800 1000 1200 Ta=-25℃ Ta=150℃ Ta=75℃ Ta=25℃ Ta=125℃ 100 1 10 100 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA I F=0.5A 300us time Mounted on epoxy board 100 1 10 100 t Ifsm 100 0 5 10 15 20 25 30 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP REVERSE RECOVERY TIME:trr(us) f=1MHz Ta=25℃ VR=400V n=30pcs AVE:28.27nA AVE:932.2mV Ta=25℃ IF=1A n=30pcs 8.3ms Ifsm 1cyc 8.3ms Ifsm 1cyc 8.3ms 012 Sin(θ＝180) D=1/2 DC 2/3 2011.06 - Rev.E

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet 1SR154-400 0.5 1.5 2.5 0 25 50 75 100 125 150 Sin(θ＝180) D=1/2DC T Tj=150℃ D=t/Tt VR Io VR=200V 0.5 1.5 2.5 0 25 50 75 100 125 150 Sin(θ＝180) D=1/2 DC TT j = 1 5 0℃ D=t/Tt VR Io VR=200V 0.002 0.004 0.006 0.008 0.01 0 100 200 300 400 D=1/2 DC Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curve"(Io-Ta)" AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curve"(Io-Tc)" ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP C=200pF R=0Ω C=100pF R=1.5kΩ AVE:5.00kV AVE:18.6V 3/3 2011.06 - Rev.E

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