1N754-1

1N746 MICROSEMI

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Silicon 500 mW Zener Diodes Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1Copyright  2003 10-31-2003 REV B WWW.Microsemi .COM SCOTTSD A L E DIVISION 1N746 thru 1N759A, -1 and 1N4370 thru 1N4372A, -1 DO-35 1N746 –759A 1N4370 – 4372A (DO-35) FEATURES APPLICATIONS / BENEFITS

• JEDEC registered 1N746 thru 1N759A and 1N4370 thru 1N4372A series
• Internal metallurgical bond option available by adding a “-1” suffix
• Also available in JAN, JANTX, and JANTXV qualifications per MIL-PRF-19500/127 by adding the JAN, JANTX, or JANTXV prefixes to part numbers for desired level of screening as well as –1” suffix; (e.g. JANTX1N751A-1, JANTXV1N758C-1, etc.)
• Military Surface Mount equivalents also available in DO-213AA by adding a UR-1 suffix in addition to the JAN, JANTX, and JANTXV prefix; e.g. JANTX1N962BUR-1 (see separate data sheet)
• Commercial Surface Mount equivalents available as MLL746 to MLL759A and MLL4370 to MLL4372A including the “-1” suffix in the DO-213AA MELF style package (consult factory for others)
• DO-7 glass body axial-leaded Zener equivalents are also available
• Regulates voltage over a broad operating current and temperature range
• Selection from 2.4 to 12 V
• Standard voltage tolerances are plus/minus 5% with A suffix identification and 10 % with no suffix
• Tight tolerances available in plus or minus 2% or 1% with C or D suffix respectively
• Flexible axial-lead mounting terminals
• Nonsensitive to ESD per MIL-STD-750 Method 1020
• Minimal capacitance (see Figure 3)
• Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING
• Operating and Storage temperature: -65ºC to +175ºC
• Thermal Resistance: 250 ºC/W junction to lead at 3/8 (10 mm) lead length from body, or 310ºC/W junction to ambient when mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm, length 25 mm
• Steady-State Power: 0.5 watts at TL < 50oC 3/8 inch (10 mm) from body or 0.48 W at TA < 25ºC when mounted on FR4 PC board as described for thermal resistance above (also see Figure1)
• Forward voltage @200 mA: 1.1 volts
• Solder Temperatures: 260 ºC for 10 s (max)
• CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) package
• TERMINALS: Leads, tin-lead plated solderable per MIL-STD-750, method 2026
• POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for Zener regulation
• MARKING: Part number
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
• WEIGHT: 0.2 grams
• See package dimensions on last page DESCRIPTION APPEARANCE The popular 1N746 thru 1 N759A and 1 N4370 thru 1 N4372A series of 0.5 watt Zener Voltage Re gulators provides a sele ction from 2.4 to 12 volts in standard 5% or 10% tolerances as well as tighte r tolerances identified by different suffix letters on the part numb er. These glass axial-leaded DO-35 Zeners are also availa ble with an internal-metallurgical-bond o ption b y adding a “-1” suffix. These are also available in JAN, JANTX, and JANTXV military quali fications. Microsemi also offers numerous other Z ener products to meet higher and lower power applications. DO-35 (DO-204AH) IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Silicon 500 mW Zener Diodes SCOTTSD A L E DIVISION 1N746 thru 1N759A, -1 and 1N4370 thru 1N4372A, -1 DO-35 WWW.Microsemi .COM ELECTRICAL CHARACTERISTICS* @ 25oC MAXIMUM REVERSE CURRENT IR @ VR = 1 VOLT NOMINAL ZENER VOLTAGE VZ @ IZT (NOTE 2) ZENER TEST CURRENT IZT MAXIMUM ZENER IMPEDANCE ZZT @ IZT (NOTE 3) @25ºC @+150ºC MAXIMUM ZENER CURRENT IZM (NOTE 4) TYPICAL TEMP COEFF. OF ZENER VOLTAGE αVZ JEDEC TYPE NO. (NOTE1) VOLTS mA OHMS µA µA mA %/ o C 1N4370 1N4371 1N4372 2.4 2.7 3.0 100 200 150 100 150 135 120 -.085 -.080 -.075 1N746 1N747 1N748 3.3 3.6 3.9 110 100 -.066 -.058 -.046 1N749 1N750 1N751 1N752 4.3 4.7 5.1 5.6 -.033 -.015 +/-.010 +.030 1N753 1N754 1N755 1N756 6.2 6.8 7.5 8.2 +.049 +.053 +.057 +.060 1N757 1N758 1N759 9.1 10.0 12.0 +.061 +.062 +.062 * JEDEC Registered Data NOTE 1: Standard tolerance on JEDEC types shown is +/- 10%. Suffix letter A denotes +/- 5% tolerance; suffix letter C denotes +/- 2%; and suffix letter D denotes +/- 1% tolerance. NOTE 2: Voltage measurements to be performed 20 seconds after application of dc test current. N OTE 3: Zener impedance derived by superimposing on IZT, a 60 cps, rms ac current equal to 10% IZT (2mA ac). See MicroNote 202 for typical zener Impedance variation with different operating currents. NOTE 4: Allowance has been made for the increase in VZ due to ZZ and for the increase in junction temperature as the unit approaches thermal equilibrium at the power dissipation of 400 mW. GRAPHS 1N746 –759A 1N4370 – 4372A (DO-35) RATED POWER DISSIPATION - mW TEMPERATURE COEFFICIENT mV/ o C TEMPERATURE COEFFICIENT %/ºC T L – LEAD TEMPERATURE ( o C) 3/8” FROM BODY or NOMINAL ZENER VOLTAGE (VOLTS) TA on FR4 PC BOARD FIGURE 1 FIGU RE 2 POWER DERATING CURVE ZENER VOLTAGE TEMPERATURE COEFFICIENT vs. ZENER VOLTAGE Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2Copyright  2003 10-31-2003 REV B

Silicon 500 mW Zener Diodes Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3Copyright  2003 10-31-2003 REV B WWW.Microsemi .COM SCOTTSD A L E DIVISION 1N746 thru 1N759A, -1 and 1N4370 thru 1N4372A, -1 DO-35 1N746 –759A 1N4370 – 4372A (DO-35) PACKAGE DIMENSIONS All dimensions in: INCH mm FIGURE 3 CAPACITANCE vs. ZENER VOLTAGE (TYPICAL)