1N6511_04 MICROSEMI

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HiRel MQ, MX, MV, and MSP Screening Options SCOTTSD A L E DIVISION 1N6511 WWW.Microsemi .COM 1N6511 DESCRIPTION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see Figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core- driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. 14-PIN Ceramic DIP IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS

  • Hermetic Ceramic Package
  • Isolated Diodes to Eliminate Cross-Talk Voltages
  • High Breakdown Voltage VBR > 75 V at 5 µA
  • Low Leakage IR< 100nA at 40 V
  • Low Capacitance C < 4.0 pF
  • Switching Speeds less than 10 ns
  • Options for screening in accordance with MIL-PRF- 19500/474 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers. For example, designate MX1N6511 for a JANTX screen.
  • High Frequency Data Lines
  • RS-232 & RS-422 Interface Networks
  • Ethernet: 10 Base T
  • Computer I/O Ports
  • LAN
  • Switching Core Drivers
  • IEC 61000-4 Compatible (see circuit in figure 1) 61000-4-2 ESD: Air 15 kV, contact 8 kW 61000-4-4 (EFT): 40 A – 5/50 ns 61000-4-5 (surge): 12 A 8/20 µs MAXIMUM RATINGS MECHANICAL AND PACKAGING
  • Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
  • Continuous Forward Current of 300 mA dc (Note 1 & 3)
  • Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
  • 400 mW Power Dissipation per Junction @ 25oC
  • 600 mW Power Dissipation per Package @ 25oC (Note 4)
  • Operating Junction Temperature range –65 to +150oC
  • Storage Temperature range of –65 to +200oC
  • 14-PIN Ceramic DIP
  • Weight 2.05 grams (approximate)
  • Marking: Logo, part number, date code
  • Pin #1 to the left of the indent on top of package
  • Carrier Tubes; 25 pcs (standard) NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20% NOTE 3: Derate at 2.4 mA/ o C above +25 o C NOTE 4: Derate at 4.8 mW/ o C above +25 o C ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified MAXIMUM FORWARD VOLTAGE VF1 IF = 100 mA (Note 1) MAXIMUM REVERSE CURRENT IR1 VR = 40 V MAXIMUM REVERSE CURRENT IR2 VR = 20 V MAXIMUM CAPACITANCE (PIN TO PIN) Ct VR = 0 V F = 1 MHz MAXIMUM FORWARD RECOVERY TIME tfr IF = 100 mA MAXIMUM REVERSE RECOVERY TIME trr IF = IR = 10 mAdc irr = 1 mAdc RL = 100 ohms MAXIMUM FORWARD VOLTAGE MATCH VF5 IF = 10 mA PART NUMBER V µA nA pF ns ns mV 1N6511 1 0.1 25 4.0 15 10 5 NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge. Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1Copyright  2003 5-03-2004 REV A

HiRel MQ, MX, MV, and MSP Screening Options Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2Copyright  2003 5-03-2004 REV A WWW.Microsemi .COM SCOTTSD A L E DIVISION 1N6511 1N6511 6511 SYMBOLS & DEFINITIONS Symbol DEFINITION VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Ct Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. SCHEMATIC PACKAGE DIMENSIONS CIRCUIT Supply rail (+VCC) GND (or -VCC) Steering Diode Application FIGURE 1 I/O Port