SG5768 MICROSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509

DESCRIPTION

The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within the array have 60V minimum breakdown voltage, can handle 500mA of current and typically switch in less than 10 nanoseconds. Each of the array configurations is available in ceramic DIP or ceramic flatpack and can be processed to JANTXV, JANTX, or JAN flows at Linfinity’s MIL-S-19500 facility. DIODE ARRAY CIRCUITS

FEATURES

  • •••• 60V minimum breakdown voltage
  • •••• 500mA current capability per diode
  • •••• Fast switching speeds: typically less than 10ns
  • •••• Low leakage current HIGH RELIABILITY FEATURES ♦♦♦♦♦ MIL-S-19500/474 QPL - 1N5768 - 1N6506 - 1N5770 - 1N6507 - 1N5772 - 1N6508 - 1N5774 - 1N6509 ♦♦♦♦♦ JANTXV, JANTX & JAN available ♦♦♦♦♦ LMI level "S" processing available 6/90 Rev 1.1 2/94 LIN F INITY Microelectronics Inc. Copyright  1994 11861 Western Avenue ∞ ∞ ∞ ∞ ∞ Garden Grove, CA 92841 CIRCUIT DIAGRAMS COMMON ANODE / COMMON CATHODE SG5772/SG6508 DUAL COMMON ANODE / COMMON CATHODE SG5774/SG6509 COMMON CATHODE SG5768/SG6506 COMMON ANODE SG5770/SG6507

6/90 Rev 1.1 2/94 LIN F INITY Microelectronics Inc. Copyright  1994 11861 Western Avenue ∞ ∞ ∞ ∞ ∞ Garden Grove, CA 92841 ABSOLUTE MAXIMUM RATINGS (Note 1 & 2) Output Current (IO ), TC = 25°C 60V 500mA Operating Junction Temperature 150°C -65°C to 200°C Note 1. Exceeding these ratings could cause damage to the device. Note 2. Applicable for each diode. J Package: F Package (10 Pin): F Package (14 Pin): THERMAL DATA Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA). Note B. The above numbers for θJC are maximums for the limiting thermal resistance of the package in a standard mount- ing configuration. The θJA numbers are meant to be guidelines for the thermal performance of the device/pc- board system. All of the above assume no ambient airflow. Operating Ambient Temperature Range Operating Ambient Temperature Range RECOMMENDED OPERATING CONDITIONS (Note 3) Note 3. Range over which the device is functional.

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, these specifications apply for the operating temperature of TA = 25°C for each diode. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) 1.0 1.1 1.5 1.0 100 V V V V V nA µA pf ns Breakdown Voltage (V BR ) Forward Voltage (VF) Reverse Current (IR ) Capacitance (C) (Note 4) Forward Recovery Time (tfr) (Note 4) Reverse Recovery Time (trr) (Note 4) SG5768/SG6506Test Conditions UnitsParameter Note 4. The parameters, although guaranteed, are not 100% tested in production. Min. Typ. Max. IR = 10µA Duty Cycle ≤ 2%, 300 µs pulse IF = 100mA IF = 200mA IF = 500mA IF = 10mA, TA = -55°C VR = 40V VR = 40V, TA = 150°C VR = 0V, f = 1MHz, Pin-to-pin IF = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω IF = IR = 200mA, irr = 20mA, RL = 100Ω

6/90 Rev 1.1 2/94 LIN F INITY Microelectronics Inc. Copyright  1994 11861 Western Avenue ∞ ∞ ∞ ∞ ∞ Garden Grove, CA 92841 ELECTRICAL CHARACTERISTICS (continued) 1.0 1.1 1.5 1.0 100 Min. Typ. Max. V V V V V nA µA pf ns ns7 Breakdown Voltage (V BR ) Forward Voltage (VF) Reverse Current (IR) Capacitance (C) (Note 4) Forward Recovery Time (tfr) (Note 4) Reverse Recovery Time (trr) (Note 4) SG5770/SG6507Test Conditions UnitsParameter 1.0 1.1 1.5 1.0 100 V V V V V nA µA pf ns ns7 I R = 10µA, 100ms pulse, ≤ 20% Duty Cycle Duty Cycle ≤ 2%, 300µs pulse IF = 100mA IF = 200mA IF = 500mA IF = 10mA, TA = -55°C VR = 40V VR = 40V, TA = 150°C VR = 0V, f = 1MHz, Pin-to-pin IF = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω Breakdown Voltage (VBR ) Forward Voltage (VF) Reverse Current (IR ) Capacitance (C) (Note 4) Forward Recovery Time (tfr) (Note 4) Reverse Recovery Time (trr) (Note 4) Parameter SG5772/SG6508 SG5774/SG6509 Min. Max.Typ. UnitsTest Conditions IR = 10µA, 100ms pulse, ≤ 20% Duty Cycle Duty Cycle ≤ 2%, 300 µs pulse IF = 100mA IF = 200mA IF = 500mA IF = 10mA, TA = -55°C VR = 40V VR = 40V, TA = 150°C VR = 0V, f = 1MHz, Pin-to-pin IF = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω IF = IR = 200mA, irr = 20mA, RL = 100Ω

6/90 Rev 1.1 2/94 LIN F INITY Microelectronics Inc. Copyright  1994 11861 Western Avenue ∞ ∞ ∞ ∞ ∞ Garden Grove, CA 92841 CONNECTION DIAGRAMS & ORDERING INFORMATION (See Notes Below) Ambient Temperature RangePart No.Package Connection Diagram 14-PIN CERAMIC DIP J - PACKAGE SG6506J -55 °C to 150°C (1N6506) -55 °C to 150°C SG5768F -55 °C to 150°C (1N5768) -55 °C to 150°C 10-PIN CERAMIC FLATPACK F - PACKAGE SG6507J -55 °C to 150°C (1N6507) -55 °C to 150°C 14-PIN CERAMIC DIP J - PACKAGE 5 6 SG5770F -55 °C to 150°C (1N5770) -55 °C to 150°C SG6508J -55 °C to 150°C (1N6508) -55 °C to 150°C 14-PIN CERAMIC DIP J - PACKAGE SG5772F -55 °C to 150°C (1N5772) -55 °C to 150°C 1 5 6 10-PIN CERAMIC FLATPACK F - PACKAGE 10-PIN CERAMIC FLATPACK F - PACKAGE Note 1. Consult factory for other packages available. 2. All packages are viewed from the top. 3. Consult factory for JAN, JAN TX, and JAN TXV product availability.

6/90 Rev 1.1 2/94 LIN F INITY Microelectronics Inc. Copyright  1994 11861 Western Avenue ∞ ∞ ∞ ∞ ∞ Garden Grove, CA 92841 CONNECTION DIAGRAMS & ORDERING INFORMATION (continued) Ambient Temperature RangePart No.Package Connection Diagram 14-PIN CERAMIC DIP J - PACKAGE SG6509J -55 °C to 150°C (1N6509) -55 °C to 150°C SG5774F -55 °C to 150°C (1N5774) -55 °C to 150°C 14-PIN CERAMIC FLATPACK F - PACKAGE 141