1N6506 MICROSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 1

Technical content

580 Pleasant St. Phone: 617-924-9280 Watertown, MA 02472 Fax : 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES:

  • HERMETIC CERAMIC PACKAGE
  • Bv > 60V at 10uA
  • Ir < 100nA at 40V
  • C < 4.0 pF Symbol Parameter Limit Unit VBR(R)*1 *2 Reverse Breakdown Voltage 60 Vdc IO *1 * 3 Continuous Forward Current 300 mAdc IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc PT1 *4 Power Dissipation per Junction @ 25°C 400 mW PT2 *4 Power Dissipation per Package @ 25°C 600 mW Top Operating Junction Temperature Range -65 to +150 °C Tstg Storage Temperature Range -65 to +200 °C NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% NOTE 3: Derate at 2.4mA/°C above +25 °C NOTE 4: Derate at 4.0mW/°C above +25 °C Symbol Parameter Conditions Min Max Unit Vf1 Forward Voltage If = 100mAdc *1 1 Vdc Vf2 Forward Voltage If = 500mAdc *1 1.5 Vdc IR1 Reverse Current VR = 40 Vdc 0.1 uAdc Ct Capacitance (pin to pin) VR = 0Vdc ; f = 1 MHz 4.0 pF tfr Forward Recovery Time If = 500mAdc 40 ns trr Reverse Recovery Time If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms 20 ns NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice. MSC1017.PDF Rev - 11/25/98 Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified 1N6506 PACKAGE OUTLINE 1: NOT CONNECTED .200 .125 .060 .015 .023 .014 .070 .030 .100 BSC .200 MAX .310 .220 .320 .290 .785 MAX .005 MIN .098 MAX O-15 .015 .008 Absolute Maximum Ratings: