1N6505 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
New Jersey Semi-Conductor Products, Ine. 20STERNAVE. ~~S~SCOCOSOSSS TELEPHONE: (078) 976-2008 20 STERN AVE. . (212) 227-6005 SPRINGFIELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.S.A. 1N5605 1N5606 1N5607 1N5608 1N5609® GENERAL PURPOSE DIODES ee This device is a Silicon Double Plug Diode for general purpose use a _ eet in computer, industrial and military applications. : an 1 rT a DIMENSIONS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS Storage temperature range, Ty, . 65°C to +200°C Lead or terminal temperature at a distance not less than - 1/16” from the seated surface (or case) for 15 seconds +275°C 1N5605 | 1NS606 | 1N5607 | 1N5608/9 Sa Reverse voltage, 25°C.free air 70V 150V 120V Maximum steady state power dissipation at 25°C, free air --_ 250mw 200mw | 250mw Derating factor _. Levees E a a Sa ennai aaaeRReRRRRE EERE ELECTRICAL CHARACTERISTICS ; 1N5605 1N5606" 1N5607* . MIN MAX | MIN MAX | MIN MAX es MIN MAX Forward Voltage, VI @ If = 20 ma 1.0V 1.0V Breakdown Voltage, Bvr Ir = 100 ua 70V [isov——S=«d~ 200 Reverse Current, Ir @ Vr = 60V ana | _25na_| 25na Reverse Current, Ir @ Vr = 60V @ 150°C Sua [Sua | Sua “Wa TmaW=tasv cs 3maweisy 1N5605 1N5606 1N5607 1N5608 ELECTRICAL CHARACTERISTICS — 1N5608 MIN MAX Forward Voltage, Vi @ If = 100 ma... ; 1.0V Breakdown Voltage, Bvr It — 100 ua . . 120 Reverse Current, Ir @ 50 V a wh 50na Reverse Current, Ir @ 50V @ 150°C ‘. 25ua “Reverse Recovery Time, Trr i = Sma, Vr = 40V Ri = 2K, C1 = 10pf Recover to 80K ohms 300 nsec Quality Semi-Conductors