1.5KE6.8 GOOD-ARK

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Technical content

scitsiretcarahCdnasgnitaRmumixaM (TA=25oC unless otherwise noted) ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Glass passivated junction ‹ 1500W peak pulse power capabililty on 10/1000us waveform, repetition rate (duty cycle): 0.05% ‹ Excellent clamping capability ‹ Low incremental surge resistance ‹ Very fast response time ‹ High temperature soldering guaranteed: 265 oC/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension ‹ Includes 1N6267 thru 1N6303A ‹ Case: Molded plastic body over passivated junction ‹ Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 ‹ Polarity: For unidirectional types the color band denotes the cathode, which is positive with respect to the anode under normal TVS operation ‹ Mounting Position: Any ‹ Weight: 0.045oz., 1.2g AC055EK5.1urht8.6EK5.1 A3036N1urht7626N1dna srosserppuSegatloVtneisnarT V055ot8.6egatloVnwodkaerBW0051rewoPesluPkaeP retemaraPl obmySe ulaVt inU 0001/01ahtiwnoitapissidrewopkaeP u mrofevaws )1( )1.giF( P MPP 0051muminiMW 0001/01ahtiwtnerruceslupkaeP u mrofevaws )1( I MPP elbaTtxeNeeSA noitapissidrewopetatsydaetS Tta L 57= o )mm5.9("573.0shtgneldael,C )2( P )VA(M 5.6W evaw-enisflahelgnissm3.8tnerrucegrusdrawrofkaeP ylnolanoitcerid-inu )3( I MSF 002s pmA egatlovdrawrofsuoenatnatsnimumixaM ylnolanoitceridinurofA001ta )4( VF 0.5/5.3s tloV dael-ot-noitcnujecnatsiserlamrehtlacipyTR θ LJ 02 o W/C tneibma-ot-noitcnujecnatsiserlamrehtlacipyTR θ AJ 57 o W/C egnarerutarepmetegarotsdnanoitcnujgnitarepOT J T, GTS 571+ot55- oC Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above T A=25oC per Fig. 2 2. Mounted on copper pad area of 1.6 x 1.6” (40 x 40 mm) per Fig. 5 3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum 4. V F=3.5 V for devices of V(BR)<220V, and VF=5.0 Volt max. for devices of V(BR)>220V Devices for Bidirectional Applications For bi-directional, use C or CA suffix for types 1.5KE6.8 thru types 1.5KE440

(TA=25oC unless otherwise noted) CEDEJ rebmunepyT krA-dooG rebmuntraP egatlovnwodkaerB V )RB( )stloV( )1( tseT tnerruc Ita T )Am( ffo-dnatS egatlov V MW )stloV( mumixaM esrever egakael Vta MW ID )4( (u )A mumixaM eslupkaep tnerruc I MPP )2( )A( mumixaM gnipmalc taegatlov I MPP VC )stloV( mumixaM erutarepmet tneiciffeoc Vfo )RB( /%( o )C.niM. xaM

(TA=25oC unless otherwise noted) CEDEJ rebmunepyT krA-dooG rebmuntraP egatlovnwodkaerB V )RB( )stloV( )1( tseT tnerruc Ita T )Am( ffo-dnatS egatlov V MW )stloV( mumixaM esrever egakael Vta MW ID )4( (u )A mumixaM eslupkaep tnerruc I MPP )2( )A( mumixaM gnipmalc taegatlov I MPP VC )stloV( mumixaM erutarepmet tneiciffeoc Vfo )RB( /%( o )C.niM. xaM Notes: 1. V(BR) measured after IT applied for 300us, IT=square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. All terms and symbols are consistent with ANSI/IEEE CA62.35 4. For bidirectional types with V R 10 volts and less the ID limit is doubled 5. For parts without A, the VBR is +10% This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage volt age-sensitive components. The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to el ectronic circuitry (ref: R.E.A. specification P.E. 60). This Transient Voltage Suppressor diode has a pulse power rating of 1500 watts for one millisecond. The response time of TVS di ode clamping action is effectively instantaneous (1 x 10-9 seconds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and othe r voltage sensitive semiconductors and components. TVS diodes can also be used in series or parallel to increase the peak power ratings. Application:

SEVRUCCITSIRETCARAHCDNASGNITAR (TA = 25oC unless otherwise noted)

SEVRUCCITSIRETCARAHCDNASGNITAR (TA = 25oC unless otherwise noted)

SEVRUCCITSIRETCARAHCDNASGNITAR (TA = 25oC unless otherwise noted)