1.5KE6.8A_12 VISHAY

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1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor Revision: 22-Nov-11 1 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TransZorb® Transient Voltage Suppressors DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional types, use C or CA suffix (e.g. 1.5KE440CA) Eletrical characteristics apply in both directions.

FEATURES

  • Glass passivated chip junction
  • Available in uni-directional and bi-directional
  • 1500 W peak pulse powe r capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
  • Excellent clamping capability
  • Very fast response time
  • Low incremental surge resistance
  • AEC-Q101 qualified
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note
  • 1.5KE250A to 1.5KE540A and 1.5KE250CA to 1.5KE440CA for commercial grade only Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) VF = 3.5 V for 1.5KE220A and below; VF = 5.0 V for 1.5KE250A and above PRIMARY CHARACTERISTICS VBR uni-directional 6.8 V to 540 V VBR bi-directional 6.8 V to 440 V PPPM 1500 W PD 6.5 W IFSM (uni-directional only) 200 A TJ max. 175 °C Case Style 1.5KE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) P PPM 1500 W Peak pulse current with a 10/1000 μs waveform (1) I PPM See next table A Power dissipation on infinite heatsink at TL = 75 °C (fig. 5) P D 6.5 W Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 200 A Maximum instantaneous forward voltage at 100 A for uni-directional only (3) VF 3.5/5.0 V Operating junction and storage temperature range T J, TSTG - 55 to 175 °C

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor Revision: 22-Nov-11 2 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: tp ≤ 50 ms (2) S urge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bi-directional types with VR 10 V and less the ID limit is doubled * Bi-directional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA, 1.5KE220CA) (+) Underwriters laboratory recognition for the cl assification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) JEDEC TYPE NUMBER GENERAL SEMICONDUCTOR PART NUMBER BREAKDOWN VOLTAGE V BR AT IT (1) (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (4) (μA) MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICENT OF VBR (%/°C)MIN. MAX.

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor Revision: 22-Nov-11 3 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 3 - Pulse Waveform Fig. 4 - Typical Junction Capacitance THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient R θJA 75 Typical thermal resistance, junction to lead R θJL 15.4 °C/ W ORDERING INFORMATION (Example) PREFERRED PIN UNIT WEIGHT (g) PREFERRED PA CKAGE CODE BASE QUANTITY DELIVERY MODE 1.5KE6.8A-E3/54 0.968 54 1400 13" diameter paper tape and reel 1.5KE6.8AHE3/54 (1) 0.968 54 1400 13" diameter paper tape and reel 0.1 100 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms td - Pulse Width (s) P PPM - Peak P ulse Po wer (kW) 100 0 25 50 75 100 125 150 175 200 Peak P ulse P ower (P PP ) or C urrent (I PP Derating in Percentage, % TJ - Initial Temperature (°C) 100 150 tr = 10 µs Peak Value IPPM Half Value - IPPM IPP td 10/1000 µs Waveform as defined by R.E.A. 0 1.0 2.0 3.0 4.0 t - Time (ms) IPPM - Peak P ulse C urrent, % I RSM TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of I PPM 5 10 100 500 100 1000 10 000 Uni-Directional Bi-Directional VR = 0 VR = Rated Stand-Off Voltage TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p VBR - Breakdown Voltage (V) C J - Capacitance (pF)

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor Revision: 22-Nov-11 4 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Power Derating Curve Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional only Fig. 7 - Incremental Clamping Voltage Curve (Uni-Directional) Fig. 8 - Incremental Clamping Voltage Curve (Uni-directional) Fig. 9 - Incremental Clamping Voltage Curve (Bi-directional) Fig. 10 - Incremental Clamping Voltage Curve (Bi-Directional) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 25 50 75 100 125 150 175 200 P D - Po wer Dissipation (W) TL - Lead Temperature (°C) Lead Lengths 1 10 100 100 200 TJ = TJ max. 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz Peak For ward S urge C urrent (A) 0.5 1 2 10 20 50 0.1 0.2 1.0 2.0 100 Waveform: 8/20 µs Impulse 1.5KE200 1.5KE6.8 1.5KE9.1 1.5KE18 1.5KE12 1.5KE130 1.5KE100 1.5KE75 1.5KE39 1.5KE33 IPP - Peak Pulse Current (A) ΔVC - Incremental Clamping Voltage ΔVC = VC - VBR 0.5 1 2 10 50 0.1 0.2 1.0 2.0 100 ΔVC - Incremental Clamping Voltage Waveform: 10/1000 µs Impulse ΔVC = VC - VBR 1.5KE200 1.5KE130 1.5KE75 1.5KE39 1.5KE33 1.5KE6.8 1.5KE9.1 IPP - Peak Pulse Current (A) 0.5 1 2 10 20 50 1.5KE200C 1.5KE75C 1.5KE39C 1.5KE15C 11C 1.5KE7.5C 1.5KE30C 0.1 0.2 1.0 2.0 100 Waveform: 10/1000 µs Impulse IPP - Peak Pulse Current (A) ΔVC - Incremental Clamping Voltage ΔVC = VC - VBR 0.5 1 2.0 10 20 50 1.5KE200C 1.5KE75C 1.5KE39C 1.5KE15C 1.5KE11C 1.5KE7.5C 1.5KE30C 0.1 0.2 100 IPP - Peak Pulse Current (A) Waveform: 8/20 µs Impulse ΔVC - Incremental Clamping Voltage ΔVC = VC - VBR

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A www.vishay.com Vishay General Semiconductor Revision: 22-Nov-11 5 Document Number: 88301 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 11 - Instantaneous Forward Voltage Characteristics Curve Fig. 12 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) APPLIACTION NOTES

  • This series of Silicon Transient Suppressors is used in applications where large voltage transients can permanently damage voltage-sensitive components.
  • The TVS diode can be used in applications where induced lightning on rura l or remote transmission lines presents a hazard to electronic circuitry
  • This Transient Voltage Suppressor diode has a pulse power rating of 1500 W for 1 ms. The response time of TVS diode clamping action is effectively instantaneous (1 x 10 -9 s bi-directional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage sensitive semiconductors and components. TVS diodes can also be used in series or parallel to increase the peak power ratings. 0.1 100 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 100 0.1 0.001 0.01 0.1 1 10 100 1000 tp - Pulse Duration (s) Transient Thermal Impedance (°C/W) 1.0 (25.4) MIN. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.210 (5.3) 0.190 (4.8) DIA. 0.042 (1.07) 0.038 (0.96) DIA. Case Style 1.5KE

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