1N6036 MICROSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
/ a3 enapat 1N6036 Microsemi Corp. sem! ©orp. thru SANTA ANA, CA / SCOTTSDALE, AZ 1N6072A For mote information call / (6002) 941-6300
FEATURES
+ 1500 WATTS PEAK POWER DISSIPATION BIDIRECTIONAL ‘AVAILABLE IN STANDOFF VOLTAGES FROM 5.5V TO 185V ABSORP TOR GENER + 00-13 HERMETICALLY SEALED PACKAGE « BIDIRECTIONAL UL RECOGNIZED {1N6070A) ‘© JAN/TX/TXV AVAILABLE PER MIL-S-19500/507
DESCRIPTION
These TAZ devices are a series of Bidirectional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently is wn damage voltage-sensitive components. £5 amy ‘These devices are manufactured using two silicon PN, low voltage junction in a Sesto (em) back to back configuration. They are characterized by their high surge 2 wa capability, extremely fast response time, and low impedance, (Ron). 1 S30 MAK re) Fam ‘TAZ has a peak pulse power rating of 1500 watts for one millisecond and there- " ] fore can be used in applications where induced lightning on rural or remote Le transmission lines represents a hazard to electronic circuitry, The response time of TAZ, clamping action is less than (5x 10-*) sec; therefore, they can protect Integrated Circuits, MOS devices, Hybrids, and other voltage-sensitive semi- conductors and components. ‘This series of devices has been proven very effective as EMP Suppressors. 430mm $50 (nay MAXIMUM RATINGS as. smo 1500 watts of peak pulse power dissipation at 25°C 8 on tam telamping (0 volts to Vip) min): less than 5 x 10-? seconds bad Operating and storage temperatures -65°C to + 175°C Steady state power dissipation: 1.0 watts at Ty, = 25°C, 3/8” from body. Repetition rate (duty cycle): 01%
ELECTRICAL CHARACTERISTICS
Clamping Factor: 1.33 @ full rated power 1.20 @ 50% rated power Clamping Factor: The ratio of the actual Vc (Clamping Voltage) to the Vipp) (Breakdown Voltage) as measured on a specific eo _ device. 3 id Set Ss eases MECHANICAL ee eT Ss FHARSSSESESH cHARAcTERistics 2 GSE EEN Pennie se mweot 3 CHI No EH Standard DO-13 package. glass and | meson stheyeht FHT ai Ba TT neal hermetic sel SHE HEE TONS Hey co SEE NS See : 2 mot seal fet S Si ee SRE WEIGHT: L5 grams (approximate)
2 Obra 1s suet 4 (lester yteat 8 Faas ai FINISH: All external surfaces are
€ PUES ENS ig [ase tamate | Th corrosion resistant and. leads ey Hhtettie ft term Haddeih Ey rom SS eel eae Seal solderable, & Gls eS eSgg 6 FSS SSti NEUF) POLARITY: piairectionat not a st °° ‘ marked, _ ty “ne Tne voli MET CT MOUNTING POSITION: Any. FIGURE 1 BV: Breakdown Voltage in Volts PEAK PULSE POWER VS, PULSE TIME FIGURE 2 TYPICAL CAPACITANCE vs. BREAKDOWN VOLTAGE att
ELECTRICAL CHARACTERISTICS @ 25°C (Test Both Polarities) ‘Maximum rns Giemping | Maximum | Maximum | _ Maximum Stand-ot Voltage’ | Reverse | Peak Pulse | Temperature Voltage Beaidown 2igae | Ceakage | "Curent | ‘Coemeient yeoee NO otage (mseo | @vam| Fie | *%eR jE Tye. VAM Vian) @ ir Tam avy Number Volts vols ma prs wk woos 55 | 675 - 925 | is7 | 100 | 128 961 cineca «63 | P43: Ze8 30 | 113 | 1000 | 132 ra Ineosr 63 | fae) 902 fo | 125 | wo | 320 e snore 9 | P78 Ber to | tat | 500 | 28 ‘058 inooa. «70 | «ogg 1000 | 138 | 20 | 109 058 siNeoss «78 | Bas: "983 to | 34 | to | He ‘088 ines’ 89 | 90°: s10 | 180 $0 | 100 or sincossa 85 | 95) 105 1 | 45 3 | 03 ons ineoo as | 99 - 21 1 | 182 19 % 075 stNeOwA = «980 || 105 116 01 | 8B 10 6 os | inset’ 80 | joe. 132 | 173 3 87 ore siNewtia 100 | ata S261 | 187 3 % O78 ine too | 17. 430 | 190 5 3 81 sNeowa NO | tee S437 | 182 3 a oa neces, 110 | 135: 15 1 | 220 3 es ‘Bea sineosa «20 | a3! 88 | 2 3 n 84 tneoee 20 | aa. 175 | 235 5 6 086 sion 0 | 52: tee 1 | RS 3 7 8 Neos, 120 | ea: 188 1] 268 5 355 88 sNews 180 | ava) te 1 | 282 5 33 088 tneots 160 | 80 «220 | 284 5 515 230 siweowea 70 | tao: 2100 | Bre 3 Se 90 ince, 170 | joe > 2e2 1 | ue 5 a 22 stew Wo | 208 | 211 | 308 8 20 92 teow 190 | 218 - 2841 | AT 5 2 94 seen = 200 |b: 3821 | Be 3 rs oa Neos, 210 | 243: 2871 | 38 5 385 026 seen 0 | 567 5 ee 1 | 875 3 o 008 ineoso a0 | 270 939 | 38 5 45 97 sineosoa 0 | 285 > Sis] ate 8 38 37 ineot, 0 | ar > 36301 | ar? 3 Bis 88 sineosia 380 | Sta) Sa? 1 | ab 8 3 98 tneose 290 | 324. 306 01 | 820 5 Fe 099 “Noosa 300 | a2: 3781 | 99 3 5 S89 Wess) sto. | er: as | 584 3 235 “00 sinessa S30 | Grr) ato 1 | 839 8 28 400 woos a0 | a7 47901 | BIS 5 24 101 “Nein «53 | 208 | 820 1 | 83 3 Ee 101 ineos, 330 | a3: Si? a | ore 5 22 404 siNtosa fo9 | 47} do 1] eae 3 232 401 tneoss 410. | 459-8611 | 785 5 204 102 siNeses «0 | #85 > 538 1 | 70 8 a 102 iNest’ 80 | Soe | sis 1 | 805 3 ‘a8 403 “Nesta «470 | 532° S88 ot] 770 3 198 “303 ineoss ago | 558. 682 1| 890 5 169 “304 siNeossA «S30 | sa9: B51 T'| 850 3 ve 104 ino 0 | bie; faa 1 | BO 5 153 04 sINeosga S80 | eae | Ta 1 | 820 8 183 {04 tweoso goo | srs - 825 | 1080 5 Bo 105 vines G40 | 43: ee 1 | to 3 188 108 inet, 680 | 738 902 1 | 1180 5 27 408 sineosta «700. | 779 > 1 1} t80 5 133 108 ineosa 730 | 819 - 009 «| 1910 8 na 108 siNooees 70 | 835: (855 1] 1250 5 20 308 Nees, ato | 90s 100 | t440 3 14 108 sineossa 820 | $50 | 1050 1) 3970 8 No 108 woos 80.0 | 990 - 1210 «3 | 1580 5 95 107 siNeos#A 840] 1050 11801 | 1520 5 39 Or iNeos S30 | topo = 13201 | 1780 A 85 107 sINeossa 1000 | 1140 | 12601 | 1680 5 89 307 ines 1050 | 1170 = 1430-1 | 1910 5 78 07 sineosoa too | 1240 1370 | 1820 5 a2 07 Neer’ ji | 1350 1501 '| a0 8 87 108 siNoosrA t2a0 | 30 118801] 2180 8 40 308 ineoss 1370 | 530 - taro 1'| 2580 8 58 108 sineossa 1450 | 620-1790 1 | 2450 5 84 308 ious, 1480 | tooo: 1080 1 | 2740 3 58 108 siNewean 1500 | iio: 18801 | 2610 3 37 108 iweo70 1550 | s7x0 - 2100 «1 | 2920 5 54 108 siNeoroA je00 | werd: 200 1'| 2780 5 Ba 108 Ineo’ je50 | te0d ° 2200 | 3080 5 a9 $08 siNeoia 1900 | 1900: 200 1'| 2340 5 at “108 wweo72 1750 | 1980 - 24201.) 3440 8 43 108 siNeorea 650 | 2000-25101 | S280 5 45 408 *Available in JAN, JANTX, JANTXV 412 NOTE 1: A TAZ. is normally selected according to the rated “Stand Off Voltage” Viet which should be equal to or greater than the DC or continuous peak oper ating voltage level.