1N5908TR

1N5908 MICROSEMI

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Technical content

1500 WATT LOW VOLTAGE TRANSIENT

WWW.Microsemi .COM 1N5907 thru 1N5908 DESCRIPTION APPEARANCE This p air of unidirectio nal low voltag e Tra nsient Voltage Sup pressor (TVS) devices fo r the 1N590 7 and 1N5908 JE DEC registrations with diffe rent packages ha ve the sam e high Pea k Pulse Po wer rating of 1500 W wit h extremely fast response times. The 1N5907 is available in a military qualified version as described in the Features section herein. They are m ost often used for protecting against transients from i nductive switching environments, induced RF effe cts, o r ind uced secondary lig htning effe cts as fou nd in surge levels o f IEC61000-4-5 de scribed herein. Th ey are also very succe ssful in p rotecting airborne avio nics a nd electrical systems when l ow voltage i s required. Sin ce their response time is virt ually instantaneous, they can also protect from ES D and EFT per IEC61000-4-2 and IEC61000-4-4. Both hermetic seal and molded types are available. CASE 1 DO-13 (DO-202AA) IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS

• Unidirectional TVS series for thru-hole mounting
• Suppresses transients up to 1500 watts @ 10/1000 µs (Figure 1) in less than 100 pico seconds
• Low working voltage (VWM) of 5 V
• Hermetic sealed DO-13 metal package for 1N5907 and plastic “Case 1” for 1N5908
• JAN/TX/TXV military qualification available for 1N5907 per MIL- PRF-19500/500 by adding JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N5907
• Surface mount equivalent packages also available as SMCJ5.0 or SMCG5.0 in separate data sheet (consult factory for other surface mount options)
• Protection from switching transients and induced RF
• Protects TTL, ECL, DTL, MOS, MSI, and other integrated circuits requiring 5.0 V or lower power supplies
• Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
• Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance: Class 1 thru 4

• Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance: Class 1 thru 4

• Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance: Class 2 & 3

• 1N5907 Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING
• 1500 Watts for 10/1000 µs at lead temperature (TL) 25oC (See Figs. 1, 2, and 4) with repetition rate of 0.01% or less*
• Operating & Storage Temperatures: -65o to +175oC for 1N5907 and -65o to +150oC for 1N5908
• THERMAL RESISTANCE (junction to lead): 50oC/W for 1N5907 or 22 oC/W for 1N5908 at 0.375 inches (10 mm) from body
• THERMAL RESISTANCE (junction to ambient): 110 oC/W for 1N5907, or 82 oC/W for 1N5908 when mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track width 1 mm, length 25 mm
• DC Power Dissipation* (1N5907): 1 Watt at TL <125oC 3/8” (10 mm) from body, or 1 Watt at TA ≤+65oC when mounted on FR4 PC board as described for thermal resistance junction to ambient
• DC Power Dissipation* (1N5908): 5 Watts at TL <+40oC 3/8” (10 mm) from body, or 1.52 Watts at TA = +25oC when mounted on FR4 PC board as described for thermal resistance junction to ambient
• Forward surge current: 200 A for 8.3ms half-sine wave at TA = +25oC
• Solder Temperatures: 260 o C for 10 s (maximum)
• CASE (1N5907): DO-13 (DO-202AA) welded hermetically sealed metal and glass
• Case (1N5908): “Case 1” Void Free transfer molded thermosetting epoxy body meeting UL94V-0
• FINISH: External metal surfaces are Tin-Lead (Sn- Pb) plated and solderable per MIL-STD-750 method 2026
• POLARITY: Polarity indicated by diode symbol or cathode band (cathode connected to case for 1N5907)
• MARKING: Part number and polarity symbol
• WEIGHT: 1.4 grams. (Approx)
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
• See package dimension on last page * TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region). Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1Copyright  2002 11-06-2003 REV A

WWW.Microsemi .COM 1N5907 thru 1N5908 ELECTRICAL CHARACTERISTICS @ 25oC JEDEC Type No. Reverse Standoff Voltage VWM (NOTE 1) Volts Minimum Breakdown Voltage V(BR) @ 1 mA Volts Maximum Standby Current ID @ VWM µA Maximum Clamping Voltage VC @ IPP1 (FIG. 3) Volts Peak Pulse Current IPP1 (FIG. 3) Amps Maximum Clamping Voltage VC @ IPP2 (FIG. 3) Volts Peak Pulse Current IPP2 (FIG. 3) Amps Maximum Clamping Voltage VC @ IPP3 (FIG. 3) Volts Peak Pulse Current IPP3 (FIG. 3) Amps 1N5907* 1N5908 5.0 5.0 6.0 6.0 300 300 7.6 7.6 8.0 8.0 8.5 8.5 120 120 * Also available in military qualified types with a JAN, JANTX, or JANTXV prefix per MIL-PRF-19500/500. NOTE 1: A TVS is normally selected according to the reverse “Standoff Voltage” VWM which should be equal to or greater than the dc or continuous peak operating voltge level. SYMBOLS & DEFINITIONS Symbol Definition VWM Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1 above) V(BR) Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25oC VC Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the series resistance and thermal rise and positive temperature coefficient (αV(BR)) IPP Peak Pulse Current: The peak current during the impulse (See Figure 2) PPP Peak Pulse Power: The pulse power as determined by the product of VC and IPP ID Standby Current: The current at the standoff voltage (VWM) I(BR) Breakdown Current: The current used for measuring Breakdown Voltage (V(BR)) GRAPHS FIGURE 1 FIGURE 2 PEAK PULSE POWER VS. PULSE TIME DERATING CURVE Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2Copyright  2002 11-06-2003 REV A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3Copyright  2002 11-06-2003 REV A WWW.Microsemi .COM SCOTTSD A L E DIVISION 1N5907 and 1N5908 1N5907 t 1N5908 5907 t 1N5908 Test wave form parameters tr = 10 µs tp = 1000 µs FIGURE 3 FIGURE 4 TYPICAL CLAMPING VOLTAGE (VC) PULSE WAVEFORM VS. PEAK PULSE CURRENT (IPP) PACKAGE DIMENSIONS hru hru mm and inches All dimensions in INCH All dimensions in mm DO-13 CASE 1 (DO-202AA)