Download PDF1N5817W BYTESONIC
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Technical content
P Cathode Anode Parameter Symbol Min. Max. Unit Reverse Breakdown Voltage at I R = 1 mA 1N5817W 1N5818W Top View Marking Code: 1N5817W: SJ 1N5818W: ME 1N5819W: SL Simplified outline SOD-123 and symbol Absolute Maximum Ratings a = 25 O Parameter Symbol Value Unit 1N5819W V V Reverse Current at V R = 20 V 1N5817W at V R = 30 V 1N5818W at V R = 40 V 1N5819W at V R = 4 V 1N5819W at V R = 6 V 1N5819W I 0.05 0.075 mA Forward Voltage at I F = 0.1 A 1N5819W at I F = 1 A 1N5817W 1N5818W 1N5819W at I F = 3 A 1N5817W 1N5818W 1N5819W V F 0.45 0.45 0.55 0.6 0.75 0.875 0.9 V Total Capacitance at V R = 4 V, f = 1 MHz C tot 120 pF 1N5817W Reverse Voltage 1N5818W V V R 1N5819W Average Forward Rectified Current I F(AV) A Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) I FSM A Power Dissipation P tot 450 mW Operating Temperature Range T j - 55 to + 125 O C Storage Temperature Range T stg - 55 to + 125 O C Characteristics at T a = 25 O C (BR)R R 1N5817W-1N5819W o
1 A Surface Mount Schottky Barrier Diode
Version 1.2 2019/7/6 http://www.bytesonic.com.tw
Plastic surface mounted package; 2 leads SOD-123 1.25 0.65 0.08 0.14 1.50 1.70 0.00 Version 1.2 2019/7/6 http://www.bytesonic.com.tw