1N5817W AITSEMI

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Technical content

AiT Semiconductor Inc. www.ait-ic.com 1N5817W~1N5819W SCHOTTKY DIODES SURFACE MOUNT SC HOTTKY BARRIER RECTIFIERS REV1.0 - SEP 2021 RELEASED - - 1 - DESCRIPTION FEATURES The 1N5817W~1N5819W are available in SOD-123FL package ⚫ Metal silicon junction, majority carrier conduction ⚫ Guarding for overvoltage protection ⚫ Low power loss, high efficiency ⚫ High current capability ⚫ low forward voltage drop ⚫ High surge capability ⚫ For use in low voltage, high frequency inverters, free wheeling, and polarity protection

applications

⚫ Available in SOD-123FL package

ORDERING INFORMATION

Note SPQ: 2,500pcs/Reel AiT provides all RoHS Compliant Products PIN DESCRIPTION

AiT Semiconductor Inc. www.ait-ic.com 1N5817W~1N5819W SCHOTTKY DIODES SURFACE MOUNT SC HOTTKY BARRIER RECTIFIERS REV1.0 - SEP 2021 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol 1N5817W 1N5818W 1N5819W Unit Maximum Repetitive Peak Reverse Voltage VRRM 20 30 40 V Maximum RMS Voltage VRMS 14 21 28 V Maximum DC Blocking Voltage VDC 20 30 40 V Maximum Average Forward Rectified Current 0.375" (9.5 mm) Lead Length at TL = 90°C IF(AV) 1.0 A Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) at TL = 70°C IFSM 25 A Maximum Instantaneous Forward Voltage at IF=1A at IF=3.1A VF 0.45 0.75 0.55 0.875 0.6 0.9 V Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage TA=25°C TA=100°C IR mA Typical Junction Capacitance CJ 110 pF Typical Thermal Resistance RθJA RθJL °C/W Storage and Operating Junction Temperature Range TJ, TSTG -55 ~+125 °C

AiT Semiconductor Inc. www.ait-ic.com 1N5817W~1N5819W SCHOTTKY DIODES SURFACE MOUNT SC HOTTKY BARRIER RECTIFIERS REV1.0 - SEP 2021 RELEASED - - 3 - TYPICAL CHARACTERISTICS Figure. 1 Forward Current Derating Curve Figure. 2 Typical Reverse Characteristics Figure. 3 Typical Forward Characteristic Figure. 4 Typical Junction Capacitance Figure. 5 Maximum Non-Repetitive Peak Forward Surge Current Figure. 6 Typical Transient Thermal Impedance

AiT Semiconductor Inc. www.ait-ic.com 1N5817W~1N5819W SCHOTTKY DIODES SURFACE MOUNT SC HOTTKY BARRIER RECTIFIERS REV1.0 - SEP 2021 RELEASED - - 4 -

PACKAGE INFORMATION

Dimension in SOD-123FL (Unit: mm) Plastic surface mounted package; 2 leads UNIT A C D E e g HE ∠ mm 0.3 mil Max 43 7.9 114 75 43 35 150 Min 35 4.7 102 67 31 28 138

AiT Semiconductor Inc. www.ait-ic.com 1N5817W~1N5819W SCHOTTKY DIODES SURFACE MOUNT SC HOTTKY BARRIER RECTIFIERS REV1.0 - SEP 2021 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product , specifications, to discontinue any integrated circuit product or service without notice, and ad vises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or war ranted to be suitable for use in life support applications, devices or systems or other critical ap plications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of dea th, personal injury, or servere property, or environmental damage. In order to minimize risks assoc iated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.