Download PDF1N5817 SSE
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FEATURES
- Epitaxial construction for chip
- High current capability
- Low forward voltage drop
- Low power loss, high efficiency
- High surge capability
- High temperature soldering guaranteed: 250 oC/10sec/0.375"(9.5mm) lead length at 5 lbs tension MECHANICAL DATA
- Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C
- Case: Molded with UL-94 Class V-O recognized flame retardant epoxy
- Polarity: Color band denotes cathode
- Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL UNITS Maximum Repetitive Peak Reverse Voltage VRRM V Maximum RMS Voltage VRMS V Maximum DC Blocking Voltage VDC V Maximum Average Forward Rectified Current (9.5mm lead length, at TL=90oC) Peak Forward Surge Current (8.3ms single half sine-wave superimposed on rated load) Maximum Forward Voltage (at 1.0A DC) V F V Maximum DC Reverse Current Ta=25oC mA (at rated DC blocking voltage) Ta=100oC mA Typical Junction Capacitance (Note 1) CJ pF Typical Thermal Resistance (Note 2) Rθ(ja) oC/W Storage and Operation Junction Temperature TSTG,TJ oC Note: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc http://www.sse-diode.com 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 40V CURRENT: 1.0A (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS 1N5817 1N5818 1N5819 20 30 40 14 21 28 20 30 40 I F(AV) 1.0 IR 1.0 10.0 A IFSM 25 A 110 -65 to +125 0.45 0.55 0.6 TECHNICAL SPECIFICATION Dimensions in inches and (millimeters) DO - 41