Download PDF1N5817 WTE
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! H i g h C u r r e n t C a p a b i l i t y A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity P r o t e c t i o n A p p l i c a t i o n s C D Mechanical Data ! Case: Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol 1N5817 1N5818 1N5819 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 20 30 40 V RMS Reverse Voltage V R(RMS) 14 21 28 V Average Rectified Output Current (Note 1) @TL = 90°C I O 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 25 A Forward Voltage @IF = 1.0A @ IF = 3.0A VFM 0.450 0.750 0.550 0.875 0.60 0.90 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 1.0 10 mA Typical Junction Capacitance (Note 2) C j 110 pF Typical Thermal Resistance Junction to Lead (Note 1) R /G01JL 60 K/W Operating and Storage Temperature Range T j, TSTG -65 to +150 °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. WTE POWER SEMICONDUCTORS DO-41 Dim Min Max A 25.4 — B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm
1N5817 – 1N5819 2 of 3 © 2002 Won-Top Electronics I ,AVERAGE OUTP UT CURRENT (A) (AV) 0.2 0.4 0.6 0.8 1.0 10 40 60 80 100 120 140150 T , LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve L Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
0.1 1.0 10 10 0 C ,CAP ACITANCE j V , REVERSE VOLTAGE (V) Fig. 4 T ypical Junction Capacitance R T = 25ºCj f = 1MHz 1 10 100 I , P EAK FORW ARD SUR GE CURRENT (A FS M NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current 8.3ms Single Half Sine-Wave JEDEC Method 0.1 1.0 N STA NTANEOUS FORW ARD C URRENT ( F V , INSTANTANEOUS FORWARD VOLTAGE (V ) Fig. 2 T ypical Forward Characteristics F 1N5817 1N5818 1N5819 T = 25ºC Pulse Width = 300 s 2% Duty Cycle j µ
1N5817 – 1N5819 3 of 3 © 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.!!!! Package Type Shipping Quantity 1N5817-T3 DO-41 5000/Tape & Reel 1N5817-TB DO-41 5000/Tape & Box 1N5817 DO-41 1000 Units/Box 1N5818-T3 DO-41 5000/Tape & Reel 1N5818-TB DO-41 5000/Tape & Box 1N5818 DO-41 1000 Units/Box 1N5819-T3 DO-41 5000/Tape & Reel 1N5819-TB DO-41 5000/Tape & Box 1N5819 DO-41 1000 Units/Box Products listed in bold are WTE Preferred devices. !T3 suffix refers to a 13” reel. TB suffix refers to Ammo Pack. Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com