Download PDF1N5817 SEMTECH
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- Plastic package has Underwriters Laboratory T Flammability Classification 94V-0 2 * Metal silicon junction, majority carrier z conduction |- Bh * Guardring for overvoltage protection sr * Low power loss, i high efficiency o * High current capability ° low forward voltage drop 3 * High surge capability 1 ah ot * For use in low voltage, high frequency inverters, ow free wheeling, and polarity protection applications Dimensions in mm * High temperature soldering guaranteed: 250 °C/10 seconds, 0.375” (9.5mm) lead length, Weight Approx. 0.34g 5 Ibs. (2.3 Kg) tension Maximum Ratings and Electrical Characteristics . Ratings at 25 °C ambient temperature unless otherwise specified. Characteristic Symbols | 1N5817 | 1N5818 | 1N5819 Maximum RMS votage [Yaw | 1 [21] 28 | Vor | “Waximum DC blocking votage [Ve, [20 [30 | 40] Vos] * Maximum non-repetitive peak reverse voltage | Vasm | 24 | 36 | 48 | Volts | * Maximum average forward rectified current 1 0.375” (9.5mm) lead length at T.=90 °C om * Peak forward surge current, 8.3ms single half sine-wave 25.0 Amp superimposed on rated load (JEDEC Method) at T,=70 °C 7 * Maximum instantaneous forward voltage at 1.0A (NOTE 1) Vp 0.450 0.550 0.600 Volts * Maximum instantaneous forward voltage at 3.1A (NOTE 1) V, 0.750 0.875 0.900 Volts * Maximum instantaneous reverse current at T,=25 °C (NOTE 1) mA rated DC reverse voltage T,=100 °C peal wnewmal sistance wore ° pe ee | ow ul Typical junction capacitance (NOTE 3) 110.0 * Storage and operating junction temperature range -65 to + 125 (@=)) SEMTECH ELECTRONICS LTD. SE fo (wholly owned subsidiary of HOMEY TECHNGLOBY LTD. ) [eee |
1N 5817 ...1N 5819 SCHOTTKY BARRIER DIODE FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD FIG. 1-FORWARD CURRENT DERATING CURVE SURGE CURRENT . ye 0 7mm 3 ors cowen tS ONT TTT il 2 re) a \\ ge NO ZR 058 card 15 E> <O ba eet] LTA 8 025 g* 10 AP =o : \\ Pali nT es Jit | | i hi és maaiil z 0 ze ob TET TT “ 0 20 40 60 80 100 120 140 Fy 0 1 10 100 LEAD TEMPERATURE, °C NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS, FIG. 4-TYPICAL REVERSE FORWARD CHRACTERISTICS. CHARACTERISTICS 50 . 100 SSS wh | | er a —— s LTV TS] sx ourv vere 3 SSS rm ——=— 2 eS 74 28, Cp tee Ea as AF | a a ee a rr ow a Ay A < —— = fp 2 oo Lt 8 2 a ee ee | < a © yy lli Tt tt ft Tt | 0. 001 0 02 04 06 08 10 12 14 16 PERCENT OF RATED PEAK REVERSE INSTANTANEOUS FORWARD VOLTAGE, VOLTAGE, % VOLTS 400 FIG. 5-TYPICAL JUNCTION CAPACITANCE = FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE “ ESS ae Be ER Z =a an B sock ee TT UIT E 400 ITN. ome § 0 SaaS eee SO SESE SRE Voie some rH 5 Eee eee a a eS o Bg SS LLIN CUTIE LE) «CCC nin rn Pr On 1 10 400 0.01 O41 1 10 100 REVERSE VOLTAGE, VOLTS t, PULSE DURATION, soo. (@@)) SEMTECHELECTRONICSLTD. B@