1N5802 MICROSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSD A L E DIVISION 1N5802 thru 1N5806 WWW.Microsemi .COM 1N5802 – 1N5806 DESCRIPTION APPEARANCE This “ultrafast recover y” r ectifier di ode s eries is mil itary qualified to MIL-PRF - 19500/477 an d is idea l for hig h-reliability applications where a fai lure cannot b e tolerated. These in dustry-recognized 2. 5 Amp rated rectifiers for working peak reverse v oltages from 5 0 to 15 0 vo lts are hermetic ally s ealed with v oidless-glass construction u sing a n inter nal “Category I ” metallur gical bond. T hey are als o available i n su rface-mount p ackages (see separate dat a sheet for 1N 5802US thru 1N5806US). Microsemi also offers numerous other rectifier products to meet higher and lower curr ent ratings with vario us rec overy tim e spe ed req uirements inclu ding standard, fast and ultrafast in both through-hole and surface-mount packages. “A” Package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS

  • Popular JEDEC registered 1N5802 to 1N5806 series
  • Voidless hermetically sealed glass package
  • Extremely robust construction
  • Triple-layer passivation
  • Internal “Category I” Metallurgical bonds
  • JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
  • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5802US thru 1N5806US)
  • Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
  • Military and other high-reliability applications
  • Switching power supplies or other applications requiring extremely fast switching & low forward loss
  • High forward surge current capability
  • Low thermal resistance
  • Controlled avalanche with peak reverse power capability
  • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING
  • Junction Temperature: -65oC to +175oC
  • Storage Temperature: -65oC to +175oC
  • Average Rectified Forward Current (IO): 2.5 A @ TL = 75ºC
  • Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)
  • Thermal Impedance: 4.5oC/W @ 10 ms heating time
  • Forward Surge Current: 35 Amps @ 8.3 ms half-sine
  • Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz
  • Solder temperature: 260ºC for 10 s (maximum)
  • CASE: Hermetically sealed voidless hard glass with Tungsten slugs
  • TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper
  • MARKING: Body painted and part number, etc.
  • POLARITY: Cathode indicated by band
  • Tape & Reel option: Standard per EIA-296
  • Weight: 340 mg
  • See package dimensions on last page

ELECTRICAL CHARACTERISTICS

(MIN.) @ 100µA VBR AVERAGE RECTIFIED CURRENT IO1 @ TL=+75ºC (NOTE 1) AVERAGE RECTIFIED CURRENT IO2 @ TA=+55ºC (Note 2) MAXIMUM FORWARD VOLTAGE @ 1 A (8.3 ms pulse) VF REVERSE CURRENT (MAX) @ VRWM IR SURGE CURRENT (MAX) IFSM (NOTE 3) REVERSE RECOVERY TIME (MAX) (NOTE 4) trr VOLTS VOLTS AMPS AMPS VOLTS µA AMPS ns o C 100 o C 25 o C 100 o C 1N5802 1N5803 1N5804 1N5805 1N5806 100 125 150 110 135 160 2.5 2.5 2.5 2.5 2.5 1.0 1.0 1.0 1.0 1.0 0.875 0.875 0.875 0.800 0.800 0.800 NOTE 1: IO1 is rated at 2.5 A @ TL = 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for TL above 75ºC. NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC. NOTE 3: TA = 25 o C @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals NOTE 4: IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1Copyright  2004 7-16-2004 REV A

VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2Copyright  2004 7-16-2004 REV A WWW.Microsemi .COM SCOTTSD A L E DIVISION 1N5802 thru 1N5806 1N5802 – 1N5806 SYMBOLS & DEFINITIONS Symbol Definition VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range IO Average Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage trr Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs. GRAPHS FIGURE 1 OUTPUT CURRENT vs. LEAD TEMP. PACKAGE DIMENSIONS inches/[mm] NOTE: Lead tolerance = +0.002/-0.003 inches