1N5711 integrated circuit reference
Local datasheet available

IC

1N5711

19 manufacturer specifications

The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost

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19
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Agilent(Hewlett-Packard...
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23

Manufacturer Specifications

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19 manufacturers / 23 documents
Manufacturer Series Package Documents Available Select specification
Microsemi Corporation - - 3 PDF HTML View spec
Micro Commercial Compon... - - 2 PDF HTML View spec
STMicroelectronics - - 2 PDF HTML View spec
Agilent(Hewlett-Packard... - - 1 PDF HTML Viewing
AVAGO TECHNOLOGIES LIMI... - - 1 PDF HTML View spec
Compensated Deuices Inc... - - 1 PDF HTML View spec
Digitron Semiconductors - - 1 PDF HTML View spec
Diodes Incorporated - - 1 PDF HTML View spec
EIC discrete Semiconduc... - - 1 PDF HTML View spec
Galaxy Semi-Conductor H... - - 1 PDF HTML View spec
General Semiconductor - - 1 PDF HTML View spec
GOOD-ARK Electronics - - 1 PDF HTML View spec
Jinan Jingheng (Group) ... - - 1 PDF HTML View spec
New Jersey Semi-Conduct... - - 1 PDF HTML View spec
SAMYANG ELECTRONICS CO.... - - 1 PDF HTML View spec
Shanghai Lunsure Electr... - - 1 PDF HTML View spec
Silicon Supplies - - 1 PDF HTML View spec
SUNMATE electronic Co.,... - - 1 PDF HTML View spec
SynSemi, Inc. - - 1 PDF HTML View spec

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Summary

Schottky Barrier Diodes for General Purpose Applications

Description

The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost

Source title 1N5711 Datasheet(PDF) - Agilent(Hewlett-Packard)