JANS1N5618US MICROSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS WWW.Microsemi .COM SCOTTSDALE DIVISION 1N5614US thru 1N5622US 1N5614US – 1N5622US DESCRIPTION APPEARANCE This “standard recovery” surface mount rectifier diode series is military qualified to MIL- PRF-19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded thru-hole package configurations (see separate data sheet for 1N5614 thru 1N5622). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS

  • Surface mount package series equivalent to the JEDEC registered 1N5614 to 1N5622 series
  • Voidless hermetically sealed glass package
  • Triple-Layer Passivation
  • Internal “ Category I” Metallurgical bonds
  • Working Peak Reverse Voltage 200 to 1000 Volts.
  • JAN, JANTX, JANTXV, and JANS available per MIL- PRF-19500/427
  • Axial-leaded equivalents also available (see separate data sheet for 1N5614 thru 1N5622)
  • Standard recovery 1 Amp rectifiers 200 to 1000 V
  • Military and other high-reliability applications
  • General rectifier applications including bridges, half- bridges, catch diodes, etc.
  • High forward surge current capability
  • Extremely robust construction
  • Low thermal resistance
  • Controlled avalanche with peak reverse power capability
  • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING
  • Junction & Storage Temperature: -65 oC to +200oC
  • Thermal Resistance: 13 oC/W junction to end cap
  • Thermal Impedance: 4.5 oC/W @ 10 ms heating time
  • Average Rectified Forward Current (I O): 1.0 Amps @ TA = 55ºC and 0.75 Amps @ TA = 100ºC
  • Forward Surge Current: 30 Amps @ 8.3 ms half-sine
  • Solder Temperatures: 260ºC for 10 s (maximum)
  • CASE: Hermetically sealed voidless hard glass with Tungsten slugs
  • TERMINALS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead (Sn/Pb) finish.
  • MARKING & POLARITY: Cathode band only
  • TAPE & REEL option: Standard per EIA-481-B
  • WEIGHT: 193 mg
  • See package dimensions and recommended pad layout on last page

ELECTRICAL CHARACTERISTICS

VBR @ 50μA AVERAGE RECTIFIED CURRENT IO @ TA (NOTE 1) FORWARD VOLTAGE (MAX.) VF @ 3A REVERSE CURRENT (MAX.) IR @ VRWM MAXIMUM SURGE CURRENT IFSM (NOTE 2) REVERSE RECOVERY (NOTE 3) trr VOLTS VOLTS AMPS VOLTS μA AMPS μs o C 100 o C 25 o C 100 o C 1N5614US 1N5616US 1N5618US 1N5620US 1N5622US 200 400 600 800 1000 220 440 660 880 1100 1.00 1.00 1.00 1.00 1.00 .750 .750 .750 .750 .750 0.8 MIN. 1.3 MAX. 0.5 0.5 0.5 0.5 0.5 2.0 2.0 2.0 2.0 2.0 NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC, derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC. NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A Microsemi Scottsdale Division Page 1Copyright © 2009 10-06-2009 REV D; SA7-45.pdf 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS WWW.Microsemi .COM SCOTTSDALE DIVISION 1N5614US thru 1N5622US 1N5614US – 1N5622US SYMBOLS & DEFINITIONS Symbol Definition VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage trr Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. GRAPHS FIGURE 1 FIGURE 2 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT TYPICAL REVERSE CURRENT vs PIV Microsemi Scottsdale Division Page 2 Copyright © 2009 10-06-2009 REV D; SA7-45.pdf 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3 WWW.Microsemi .COM SCOTTSDALE DIVISION 1N5614US thru 1N5622US 1N5614US – 1N5622US PACKAGE DIMENSIONS AND PAD LAYOUT NOTE: This Package Outline has also previously PAD LAYOUT been identified as “D-5A” INCHES mm A 0.246 6.25 B 0.067 1.70 C 0.105 2.67 Note: If mounting requires adhesive separate from the solder, an additional 0.060 inch diameter contact may be placed in the center between the pads as an optional spot for cement. INCHES mm MIN MAX MIN MAX BD .097 .103 2.46 2.62 BL .185 .200 4.70 5.08 ECT .019 .028 0.48 0.71 Copyright © 2009 10-06-2009 REV D; SA7-45.pdf