Download PDF1N5614 EIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
1N5614 - 1N5622 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 1000 Volts Io : 1.0 Ampere FEATURES : * Glass passivated chip * High forward surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 UNIT Maximum Working Peak Reverse Voltage VRWM 200 400 600 800 1000 V Minimum Breakdown Voltage @ 50 μA VBR(MIN) 220 440 660 880 1100 V Maximum Average Forward Current at Ta = 55 °C 1.0 at Ta = 100 °C 0.75 Peak Forward Surge Current (Ta = 100 °C,f = 60 Hz, IF(AV) = 750 mA for ten 8.3 ms surges @ 1 minute intervals) Minimum Forward Voltage at IF = 3.0 A V F(MIN) 0.8 V Maximum Forward Voltage at IF = 3.0A V F(MAX) 1.3 V Maximum Reverse Current at VRWM, Ta = 25 °C I R 0.5 at VRWM, Ta = 100 °C I R(H) 25 Maximum Reverse Recovery Time ( Note 1 ) Trr 2.0 μs Thermal Resistance , Junction to Lead (Note 2) RӨJL 38 °C/W Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C Notes : (1) Reverse Recovery Test Conditions : I F = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A. (2) At 3/8"(10 mm) lead length form body. Page 1 of 1 Rev. 02 : July 24, 2006 μA A RATING IFSM 30 IF(AV) A DO - 41 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN.0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.161 (4.1) 1.00 (25.4) MIN.0.034 (0.86) 0.028 (0.71) Certificate TH97/10561QM Certificate TW00/17276EM