CDLL5518 MICROSEMI

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PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: http://www.microsemi.com 143 FIGURE 1 DESIGN DATA CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 °C/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 35 °C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +125°C DC Power Dissipation: 500 mW @ T EC = +125°C Power Derating: 10 mW / °C above T EC = +125°C Forward Voltage @ 200mA: 1.1 volts maximum ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. B-C-D SUFFIX CDI NOMINAL ZENER MAX. ZENER MAXIMUM REVERSE MAXIMUM REGULATION LOW TYPE ZENER TEST IMPEDANCE LEAKAGE CURRENT DC ZENER FACTOR V Z NUMBER VOLTAGE CURRENT B-C-D SUFFIX CURRENT CURRENT VZ@ 1ZT 1ZT ZZT @ 1ZT lR VR = VOLTS 1 ZM ∆VZ 1ZL (NOTE 1) (NOTE 2) (NOTE 3) (NOTE 4) (NOTE 5) NON & A- B-C-D- VOLTS mA OHMS µ Adc SUFFIX SUFFIX mA VOLTS mA NOTE 1 No Suffix type numbers are + 20% with guaranteed limits for only V Z, lR, and VF. Units with “A” suffix are +10% with guaranteed limits for V Z, lR, and VF. Units with guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for+2.0% and “D” suffix for +1.0%. NOTE 2 Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C. NOTE 3 Zener impedance is derived by superimposing on 1 ZT A 60Hz rms a.c. current equal to 10% of1ZT. NOTE 4 Reverse leakage currents are measured at V R as shown on the table. NOTE 5 ∆VZ is the maximum difference between V Z at lZT and VZ at lZL measured with the device junction in thermal equilibrium.

  • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437
  • ZENER DIODE, 500mW
  • LEADLESS PACKAGE FOR SURFACE MOUNT
  • LOW REVERSE LEAKAGE CHARACTERISTICS
  • METALLURGICALLY BONDED 1N5518BUR-1 thru 1N5546BUR-1 and CDLL5518 thru CDLL5546D MILLIMETERS INCHES DIM MIN MAX MIN MAX D 1.60 1.70 0.063 0.067 F 0.41 0.55 0.016 0.022 G 3.30 3.70 .130 .146 G1 2.54 REF. .100 REF. S 0.03 MIN. .001 MIN.

.1 .2 .5 1 2 5 10 20 50 100 OPERATING CURRENT IZT (mA) FIGURE 3 ZENER IMPEDANCE VS. OPERATING CURRENT ZENER IMPEDANCE ZZT (OHMS) 1000 500 400 300 200 100

28 VOLT

6.8 VOLT

11 VOLT

0 25 50 75 100 125 150 175 TEC , End cap temperature (C°) POWER DERATING CURVE 500 400 300 200 100 Pd, Rated Power Dissipation (mW) FIGURE 2