1N5391G-T TSC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

1N5391G-T – 1N5399G-T Taiwan Semiconductor

1 Version: B2105

1.5A, 50V - 1000V Standard Rectifier

FEATURES

  • Glass passivated chip junction
  • High efficiency, Low VF
  • High current capability
  • High surge current capability
  • Low power loss
  • RoHS Compliant
  • Halogen-free according to IEC 61249-2-21

APPLICATIONS

  • DC to DC converter
  • Switching mode converters and inverters
  • General purpose MECHANICAL DATA
  • Case: DO-204AC (DO-15)
  • Molding compound meets UL 94V-0 flammability rating
  • Terminal: Pure tin plated leads, solderable per J-STD-002
  • Meet JESD 201 class 1A whisker test
  • Polarity: Indicated by cathode band
  • Weight: 0.400g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF 1.5 A VRRM 50 - 1000 V IFSM 50 A TJ MAX 150 °C Package DO-204AC (DO-15) Configuration Single die DO-204AC (DO-15) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL 5391 G-T 5392 G-T 5393 G-T 5395 G-T 5397 G-T 5398 G-T 5399 G-T UNIT Marking code on the device 1N 5391G 5392G 5393G 5395G 5397G 5398G 5399G Repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 280 420 560 700 V Forward current IF 1.5 A Surge peak forward current, 8.3ms single half sine wave superimposed on rated load IFSM 50 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C

1N5391G-T – 1N5399G-T Taiwan Semiconductor

2 Version: B2105

Junction-to-ambient thermal resistance RӨJA 65 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage(1) 1N5391G-T 1N5392G-T IF = 1.5A, TJ = 25°C VF - 1.1 V 1N5393G-T 1N5395G-T 1N5397G-T 1N5398G-T 1N5399G-T - 1.0 V Reverse current @ rated VR (2) TJ = 25°C IR - 5 µA TJ = 125°C - 100 µA Junction capacitance 1MHz, VR = 4.0V CJ 15 - pF Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms

ORDERING INFORMATION

ORDERING CODE(1) PACKAGE PACKING 1N539xG-T DO-204AC (DO-15) 3,500 / Tape & Reel 1N539xG-T A0G DO-204AC (DO-15) 1,500 / Ammo box Notes: 1. "x" defines voltage from 50V (1N5391G-T) to 1000V (1N5399G-T)

1N5391G-T – 1N5399G-T Taiwan Semiconductor

3 Version: B2105

(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig.5 Maximum Non-Repetitive Forward Surge Current 0.5 1.5 25 50 75 100 125 150 100 0.1 1 10 100 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=75°C 0.1 Pulse width 300μs 1% duty cycle Pulse width 300μs 1% duty cycle 1N5393G-T-1N5399G-T 1N5391G-T-1N5392G-T 1 10 100 8.3ms single half sine wave CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (µA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) f=1.0MHz Vsig=50mVp-p NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE CURRENT (A)

1N5391G-T – 1N5399G-T Taiwan Semiconductor

4 Version: B2105

PACKAGE OUTLINE DIMENSIONS DO-204AC (DO-15) MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code

1N5391G-T – 1N5399G-T Taiwan Semiconductor

5 Version: B2105

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