1N5059GP VISHAY
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Document Number: 88513 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Glass Passivated Junction Rectifier 1N5059GP thru 1N5062GP Vishay General Semiconductor
FEATURES
- Superectifier structure for high reliability application
- Cavity-free glass-passivated junction
- Low forward voltage drop
- Low leakage current
- High forward surge capability
- Meets environmental standard MIL-S-19500
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- AEC-Q101 qualified
- Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes application. MECHANICAL DATA Case: DO-204AC, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end Note (1) JEDEC registered values PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V to 800 V IFSM 50 A IR 5.0 μA VF 1.2 V TJ max. 175 °C DO-204AC (DO-15) SUPERECTIFIER® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT Maximum repetitive peak reverse voltage V RRM (1) 200 400 600 800 V Maximum RMS voltage V RMS 140 280 420 560 V Maximum DC blocking voltage V DC (1) 200 400 600 800 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at T A = 75 °C IF(AV) (1) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM (1) 50 A Maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length at T A = 25 °C IR(AV) (1) 5.0 μA TA = 75 °C 150 Operating junction and storage temperature range T J, TSTG - 65 to + 175 °C
www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 88513 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5059GP thru 1N5062GP Vishay General Semiconductor Note (1) JEDEC registered values Note Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SY MBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT Max. instantaneous forward voltage 1.0 A T A = 75 °C V F (1) 1.2 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C IR (1) 5.0 μA TA = 175 °C 300 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 μs Typical junction capacitance 4.0 V, 1 MHz C J 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT Typical thermal resistance R JA (1) 45 °C/W RJL (1) 20 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N5061GP-E3/54 0.425 54 4000 13" diam eter paper tape and reel 1N5061GP-E3/73 0.425 73 2000 Ammo pack packaging 1N5061GPHE3/54 (1) 0.425 54 4000 13" diameter paper tape and reel 1N5061GPHE3/73 (1) 0.425 73 2000 Ammo pack packaging 25 50 75 100 125 150 175 200 0.2 0.4 0.6 0.8 1.0 Average Forwar d Rectified Current (A) Ambient Temperature (°C) 60 Hz Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 1 10 100 Number of Cycles at 60 Hz Peak Forwar d Surge Current (A) TA = 100 °C 8.3 ms Single Half Sine-Wave (JEDEC Method)
Document Number: 88513 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5059GP thru 1N5062GP Vishay General Semiconductor Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.01 0.1 100 Instantaneous Forward Voltage (V) In stantaneou s Forward Current (A) TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.01 0.1 60 80 10020 40 Percent of Rated Peak Reverse Voltage (%) In stantaneou s Rever se Leakage Current (μA) TJ = 125 °C TJ = 25 °C TJ = 75 °C 100 100 Reverse Voltage (V) 11 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) 0.01 0.1 10 1 100 0.1 100 t - Pulse Duration (s) Transient Thermal Impedance (°C/W) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 1.0 (25.4) MIN.
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