1N5059_15 CENTRAL
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
1.0 AMP, 200 THRU 800 VOLT
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for general purpose applications where high reliability is desired. Higher voltage devices are available in the CPR1-010 series. MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 1N5059 1N5060 1N5061 1N5062 UNITS Peak Repetitive Reverse Voltage VRRM 200 400 600 800 V DC Blocking Voltage V R 200 400 600 800 V RMS Reverse Voltage V R(RMS) 140 280 420 560 V Average Forward Current (TA=75°C) I O 1.0 A Peak Forward Surge Current, tp=8.3ms I FSM 40 A Operating and Storage Junction Temperature T J, Tstg -65 to +175 °C Thermal Resistance ΘJA 40 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR V R=Rated VRRM 5.0 μA IR V R=Rated VRRM, TA=175°C (1N5059, 1N5060) 300 μA IR V R=Rated VRRM, TA=175°C (1N5061, 1N5062) 200 μA VF I F=1.0A 1.2 V CJ V R=4.0V, f=1.0MHz 15 pF MARKING: FULL PART NUMBER GPR-1A CASE R5 (28-February 2013) www.centralsemi.com
GPR-1A CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER www.centralsemi.com R5 (28-February 2013)