1N4954 MICROSEMI

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Technical content

VOIDLESS-HERMETICALLY-SEALED

5 WATT GLASS ZENER DIODES

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1Copyright  2005 2-4-2005 REV C WWW.Microsemi .COM SCOTTSD A L E DIVISION 1N4954 thru 1N4996, 1N5968 thru 1N5969, and 1N6632 thru 1N6637 1N4954 thru 1N4996 1N5968 thru 1N5969 1N6632 thru 1N6637 DESCRIPTION APPEARANCE This Zener Voltage Reg ulator series is military qualified to MIL-PRF - 19500/356 a nd is ide al for high -reliability applicat ions where a failure cannot be to lerated. T hese i ndustry-recognized 5 Watt Zen er Voltage Regulators a re he rmetically sealed with voidless-gl ass co nstruction usi ng an internal metallurgical bond. It includes Zener selections from 3.3 to 390 volts in standard 5% tolerances as well as tig hter tolerances identified by different suffi x letters on the part nu mber. They are al so ava ilable in surface-mount packages (see se parate data sheet for 1 N4954US thru 1N4996US, 1N5968US thru 1N5 969US, and 1N663 2US thru 1 N6637US). Microsemi also offers nu merous other Zener products to me et higher and lower power ratings in both thru-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS

  • Popular JEDEC registered series
  • Voidless hermetically sealed glass package
  • Extremely robust construction
  • Triple-layer passivation
  • Internal “Category I” Metallurgical bonds for 1N4954 thru 1N4996, and “Category III” for 1N6632 thru 1N6637 as well as 1N5968 thru 1N5959
  • JAN, JANTX, JANTXV, and JANS available per MIL- PRF-19500/356
  • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N4954US thru 1N4996US, 1N6632US thru 1N6637US and 1N5968US thru 1N5969US
  • Regulates voltage over a broad operating current and temperature range
  • Extensive selection from 3.3 to 390 V
  • Standard voltage tolerances are plus/minus 5% with no suffix
  • Tight tolerances available in plus or minus 2% or 1% with C or D suffix respectively
  • Flexible axial-lead mounting terminals
  • Nonsensitive to ESD per MIL-STD-750 Method 1020
  • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING
  • Operating Temperature: -65oC to +175oC.
  • Storage Temperature: -65oC to +175oC.
  • Power Dissipation: 5 Watts @ TA = 25oC
  • Thermal Resistance: 22oC/W junction to lead at 3/8 inch (10 mm) from body for 1N4954 thru 1N4996 and 30oC/W for 1N6632 thru 1N6637, 1N5968 thru 1N5969
  • Thermal Impedance at 10 ms: 1.8oC/W for 1N4954 thru 1N4996, and 3.0oC/W for both the 1N6632 thru 1N6637 & 1N5968 thru 1N5969
  • Forward Voltage: 1.50 V at 1.0 A
  • CASE: Hermetically sealed voidless hard glass with Tungsten slugs
  • TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper except for JANS with solid Silver (Ag) and no finish
  • MARKING: Body painted and part number, etc.
  • POLARITY: Cathode indicated by band
  • Tape & Reel option: Standard per EIA-296
  • Weight: 750 mg “E” Package

VOIDLESS-HERMETICALLY-SEALED 1N4954 thru 1N4996, 1N5968 thru 1N5969, and 1N6632 thru 1N6637 WWW.Microsemi .COM 1N4954 thru 1N4996 1N5968 thru 1N5969 1N6632 thru 1N6637 ELECTRICAL CHARACTERISTICS @ 25oC MAXIMUM ZENER IMPEDANCE MAXIMUM REVERSE LEAKAGE CURRENT VOLTAGE NOMINAL ZENER VOLTAGE VZ @ IZT TEST CURRENT IZT ZZ @ IZT ZZK* @ IZK=1mA VOLTAGE REGULATION (Note 1) ∆VZ IR VR MAXIMUM TEMPERATURE COEFF. αVZ @ IZT MAXIMUM CONTINUOUS CURRENT IZM SURGE CURRENT IZSM TYPE* VOLTS mA OHMS OHMS VOLTS µA VOLTS %/oC mA AMPS 1N6632 1N6633 1N6634 1N6635 1N6636 1N6637 3.3 3.6 3.9 4.3 4.7 5.1 380 350 320 290 260 240 3.0 2.5 2.0 2.0 2.0 1.5 500 500 500 500 450 400 0.90 0.80 0.75 0.70 0.60 0.50 300 250 175 1.0 1.0 1.0 1.0 1.0 1.0 -.075 -.070 -.060 -.050 +/-.025 +/-.030 1440 1320 1220 1100 1010 930 20.0 18.7 17.6 16.4 15.3 14.4 1N5968 1N5969 1N4954 1N4955 1N4956 5.6 6.2 6.8 7.5 8.2 220 220 175 175 150 1.0 1.0 1.0 1.5 1.5 400 1000 1000 800 600 0.4 0.5 0.7 0.7 0.7 5000 1000 150 100 4.28 4.74 5.2 5.7 6.2 .04 .04 .05 .06 .06 865 765 700 630 580 29.3 26.4 1N4957 1N4958 1N4959 1N4960 1N4961 9.1 10.0 150 125 125 100 100 2.0 2.0 2.5 2.5 3.0 400 125 130 140 145 0.7 0.8 0.8 0.8 0.9 6.9 7.6 8.4 9.1 9.9 .06 .07 .07 .07 .08 520 475 430 395 365 1N4962 1N4963 1N4964 1N4965 1N4966 3.5 3.5 4.0 4.5 5.0 150 155 160 165 170 1.0 1.1 1.2 1.5 1.8 11.4 12.2 13.7 15.2 16.7 .08 .08 .085 .085 .085 315 294 264 237 216 9.0 8.0 7.0 1N4967 1N4968 1N4969 1N4970 1N4971 5.0 6.0 175 180 190 200 220 2.0 2.0 2.5 2.8 3.0 18.2 20.6 22.8 25.1 27.4 .090 .090 .090 .095 .095 198 176 158 144 132 6.5 6.0 5.5 5.0 4.5 1N4972 1N4973 1N4974 1N4975 1N4976 230 240 250 270 320 3.0 3.3 3.5 4.0 4.4 29.7 32.7 35.8 38.8 42.6 .095 .095 .095 .095 .095 122 110 100 4.0 3.5 3.2 3.0 2.8 1N4977 1N4978 1N4979 1N4980 1N4981 400 500 620 720 760 5.0 5.5 6.0 6.6 7.5 47.1 51.7 56.0 62.2 69.2 .100 .100 .100 .100 .100 63.0 58.0 52.5 2.5 2.2 2.0 1.8 1.6 1N4982 1N4983 1N4984 1N4985 1N4986 100 110 120 130 150 110 125 170 190 330 800 1000 1150 1250 1500 8.0 9.0 76.0 83.6 91.2 98.8 114.0 .100 .100 .100 .105 .105 47.5 43.0 39.5 36.6 31.6 1.4 1.2 1.00 0.80 0.75 1N4987 1N4988 1N4989 1N4990 1N4991 160 180 200 220 240 350 450 500 550 650 1650 1750 1850 2000 2050 121.6 136.8 152 167 182 .105 .110 .110 .115 .115 29.4 26.4 23.6 21.6 19.8 0.70 0.60 0.50 0.50 0.40 1N4992 1N4993 1N4994 1N4995 1N4996 270 300 330 360 390 800 950 1175 1400 1800 2100 2150 2200 2300 2500 206 228 251 274 297 .120 .120 .120 .120 .120 17.5 15.6 14.4 13.0 12.0 0.35 0.30 0.25 0.22 0.20 *IZK = 5 mA for 1N5968 NOTE 1: Maximum voltage change ∆VZ between 10% of IZM and 50% of IZM Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2Copyright  2005 2-4-2005 REV C

VOIDLESS-HERMETICALLY-SEALED 1N4954 thru 1N4996, 1N5968 thru 1N5969, and 1N6632 thru 1N6637 WWW.Microsemi .COM 1N4954 thru 1N4996 1N5968 thru 1N5969 1N6632 thru 1N6637 SYMBOLS & DEFINITIONS Symbol Definition VZ Zener Voltage: The zener voltage the device will exhibit at a specified current (IZ) in its breakdown region. IZ, IZT, IZK Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), or near breakdown knee (IZK). ZZT or ZZK Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT or IZK respectively. VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. IR Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. IZM Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. IZSM Maximum Zener Surge Current: The nonrepetitive peak value of zener surge current at a specified wave form. GRAPHS FIGURE 1 FIGURE 2 POWER DISSIPATION vs. LEAD SURGE POWER vs. TEMPERATURE DERATING CURVE SURGE DURATION FIGURE 3 TYPICAL ZENER IMPEDANCE vs. ZENER CURRENT Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3Copyright  2005 2-4-2005 REV C

VOIDLESS-HERMETICALLY-SEALED 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 4Copyright  2005 2-4-2005 REV C WWW.Microsemi .COM SCOTTSD A L E DIVISION 1N4954 thru 1N4996, 1N5968 thru 1N5969, and 1N6632 thru 1N6637 1N4954 thru 1N4996 1N5968 thru 1N5969 1N6632 thru 1N6637 PACKAGE DIMENSIONS