1N643 MICROSEMI
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- Manufacturer or author: Provided By digicamel.com
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Technical content
COMPUTER DIODE IN643; JAN 1N643 rfaehes 1N662; JAN 1N662 Switching 1N663; JAN 1N663 FEATURES DESCRIPTION © Metallurgical Bond This device is particularly suited to ® Qualified to MIL-S-19500/256 applicatians where medium speed * Planar Passivated Chip switching is required. Moisture free © DO-7 Package stability is ensured through hermetic. ABSOLUTE MAXIMUM RATINGS, AT 25°C 1N643 1N662 UAN'INeAS——_JAN'INGG2 1Nses JAN 1N6S MECHANICAL SPECIFICATIONS: J .1N643, 1N662, 1N663 DO-7 1N643 1N662 1 ‘1N663 4 | pao 4 feta Mies | [ea] 195-300 | 495-762 | [oT oi9 - 023 43-53 Microsemi Corp. Watertown The ose sa / moar
SWITCHING DIODES PRODUCT SELECTION GUIDE j UNIBOND SWITCHING DIODES . aan | oe ens eo | FTAA ison iptoneaslil “ahebasHE 7 1s0v 300 | 11V@200ma] 45 20pf Nesé2tt || 100V 300 | 12V@100ma | 50 5.00t snesastt| 75v 300 | 12V.@ 100mA 60 5.0pf 2 7 Lov @ oma tAvailable as JANTX, JANTXV. tt Available as JANTX, JANTXV, UJANTX, WANTXV. SWITCHING jaatea’ oi] 35 150 | 1.0 @ 30mA 2 4 anaisa 4) 40 150 | 49-52@ 0.1mA 2 2 pina | 70 280 (| 4435 GOlma 5 2 Nees | | 75 75 |10@ 10mA 4 2 fF aNaSaares | 75 125 | 10.@ 10mA 4 2 jaaad*t | zs 150 | .74.88 @ 20mA 4 2 rina} 75 150 | 10@ Soma 2 > \\ metal 75 150 | 49.55 @ 0.1mA 2 2 PINABOB: | 5 150 | 5-575 @ .25mA 2 2 Panag |) 75 150 | 10@20ma 4 4 pinay. | 75 150 | 10@ 20ma 4 2 Anas) | 78 isn | Ing tama 2 ‘ 1 en 75 130 | 10@ 30mA 4 2 | aNséoot = 75 200 | 54.62. @ 1mA 4 25 banaiaa | | oe 200 | 1.0@ 10mA 4 2 paneaeaet || 75 200 | 1.0@ 10ma 2 2 | iNeaate 100 75 | 1.0@ 10mA 5 4 Eanasaares | 100 125 | 10@ 10ma 5 4
580 PLEASANT STREET « WATERTOWN, MA 02172
TEL. (617) 926-0404 + FAX (617) 924-1235 5-3 PRINTED IN USA.
1N643, 1N662, 1N663 JAN 1N643, 1N662, 1N663 ELECTRICAL SPECIFICATIONS (at 25°C unless noted) Maximum Maximum Maximum | Maximum |
1 Reverse Keverse Peak Reverse Reverse
ype Current Current Current Current : @ 25°C OC @ 25°C @ 100°C 25nade lukde 100 Arn 1GpAde @ @ @ @ Va = 10Vde Va = 100Vdce Va = 200Ve« Ve = 100Vde 25nAdc ! SyAdc 100pAex 100~Adc 1N662 @ @ @ @ Va = 10Vdc i Va = 50Vde Ve = L00Ve« Va = 50Vde 25nAdc SyAdc 100pAr« 50yAdc @ e @ i @ Va = 10Véc Va=75Vdc | Vn = 100Vex Va= 75Vde ELECTRICAL SPECIFICATIONS (at 25°C unless noted) Maximum Maximum Forward Reverse Type Voltage Capacitance Recovery @ 25°C Tine 300ns 1.0Vae 3pF @ ‘1N643 @ @ p= 5mA lp = LOmAde Vr = 175V tn = 17.5mA Inec = 0.2nA 500ns 1.0Vde 3pF @ 1N662 @ @ Ip = 5mA Ip = LOmAdc Va = 80V In = 17.5mA loge = 0.4 500ns L.OVdc 30F @ ‘1N662 @ @ i} lp = 5mA I, = 100mAde Vn 80V a= 17.5mA Inge = 0.4m Average Rectified Current vs. Ambient Temperature . il | | erating Cure 1N663| | z © X E NT | | 5 st | Ld & Derating Curve IN6#3 and 1N652 3 a9 L_4 { & | by sus xe 0 20 40 ~@ 0 100 120 140 160 Ta AMBIENT TEMPERATURE (°C)
590 PLEASANT STREET « WATERTOWN, MA2I72
TEL. 617) 926-0404 + FAX (617) 924-1238 55 pureD NSA