1N4448 GE
Document overview
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Technical content
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified max. .150 (3.8) max.∅ Cathode .020 (0.52) Mark max. ∅ .079 (2.0) Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g 1N4448 Symbol Value Unit Reverse Voltage V R 75 V Peak Reverse Voltage V RM 100 V Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz I0 1501) mA Surge Forward Current at t < 1 s and Tj = 25 °C I FSM 500 mA Power Dissipation at Tamb = 25 °C P tot 5001) mW Junction T emperature T j 175 °C Storage Temperature Range T S –65 to +175 °C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Silicon Epitaxial Planar Diode Fast switching diode. This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation IMBD4448.
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified 1N4448 Rectification Efficiency Measurement Circuit Symbol Min. T yp. Max. Unit Forward Voltage at IF = 5 mA at IF = 10 mA VF VF 0.62 0.72 V V Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V , Tj = 150 °C IR IR IR nA µA µA Reverse Breakdown Voltage tested with 100 µA Pulses V (BR)R 100 – – V Capacitance at VF = VR = 0 V C tot ––4p F Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V , RL = 100 Ω trr ––4n s Thermal Resistance Junction to Ambient Air RthJA – – 350 1) K/W Recification Efficiency at f = 100 MHz, VRF = 2 V ηv 0.45 – – – 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
RATINGS AND CHARACTERISTIC CURVES 1N4448
RATINGS AND CHARACTERISTIC CURVES 1N4448