1N4448 SEMTECH
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Technical content
SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode T OT fast switching diode. 5 [- max. 1.99 Pr This diode is also available in MiniMELF case with type Tt " Sithode desigantion LL4448. & Mark Glass case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings (T, = 25 °C) ee Rectified Current (Average) Half Wave Rectification with Resist. Load at T,,, = 25°C and f > 50 Hz a " Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (@®)) SEMTECHELECTRONICSLTD. @ \\SEEZ/, Cl owned subsidiary of HOREY TECHGLOBY LTD. ) a
SILICON EPITAXIAL PLANAR DIODE Characteristics at T, = 25 °C Forward Voltage at |,=5 mA V, 0.72 Vv at |, = 100 mA Vv, 1 v Leakage Current at V, = 20 V nA at V,=75V HA at V,, = 20 V, T, = 150°C pA Reverse Breakdown Voltage Veeaya Vv tested with 100 A Pulses Capacitance C.,, 4 atV,=V,=0 Reverse Recovery Time from |,= 10 MA to |,= 1 mA, V,=6 V, R, = 100 9, t, Termal Resistance Junction to Ambient Air K/imw Rectification Efficiency at f = 100 MHz, V,, = 2.V hy 0.45 ” Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature boo Ver 2V Par Ska. Ve Rectification Efficiency Measurement Circuit (@=)) SEMTECHELECTRONICSLTD. @ SEZ] solly owned subsiiary of HONEY TECHNOLOGY LTD. ) Bs,
SILICON EPITAXIAL PLANAR DIODE Forward characteristics Dynamic forward resistance versus forward current Poo TTLII1] a coor ROH s/n : am HH a Aa * ot NEL TT i / Te + CONC eo LLY TNT HAR | LLUENTCTT COAECE EE , cH CAEP LUTTLEN TT] LE ET COCA wt "ELELLLN NEL a cco TOTO TTEN a (OES 0 1 ‘ av 0? 107 1 ° 10? mA Admissible power dissipation Relative capacitance versus ambient temperature versus reverse voltage % aa TT inee oe TTT TT r Te25%c wot LETTE aa ot th “PTR wo NET TTT = we) | PNT a eee WT ENTE LLLE TTT TEN 0 100 be 200°C 0 2 4 6 \\e 3 10V
SILICON EPITAXIAL PLANAR DIODE Leakage current versus junction temperature He) 1N4448 sEET TTT TTT LETT A TT feo tt TTT IAT TT Phot LETT eA ALT sLLEVT TT TTT LEAT TT we ALT T TT ATT Te | YT fear] »CLLT TTT TTT] C) 100 200°C —+ jj Admissible repetitive peak forward current versus pulse duration Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature A 1N4448 (SSS SESS em, { [ | [ TT TTP TT PSe | Le || edo PNT PP ETT SSS SSS Fee : S=22=eoS==— ae Bg A SG GS NS a wt TTT PET Tit PPP Tey yy we. 5 we 2 5 032 5 We, 5 We 5 1 2 5 Ws —+1,