1N4150W GE
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
FEATURES
¨ Silicon Epitaxial Planar Diode ¨ For general purpose and switching. ¨ This diode is also available in other case styles including the DO-35 case with the type designation 1N4150 and the MiniMELF case with the type designation LL4150. MECHANICAL DATA Case: SOD-123 Plastic Case Weight: approx. 0.01 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Peak Reverse Voltage V RM 50 V Maximum Average Rectified Current I O 200 mA Maximum Power Dissipation at Tamb = 25¡C P tot 410 (1) mW Maximum Forward Voltage Drop at IF = 200 mA V F 1.0 V Maximum Reverse Current at VR = 50 V I R 100 nA Maximum Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 I F Trr 4.0 ns Maximum Junction Temperature T j 150 ¡C Storage Temperature Range T S Ð65 to +150 ¡C NOTES: (1) Valid provided that electrodes are kept at ambient temperature 1/4/99 Dimensions in inches and (millimeters) SOD-123 .022 (0.55) max. .004 (0.1) .112 (2.85) .152 (3.85) .067 (1.70) max. .053 (1.35) min. .010 (0.25) Cathode Mark max. .006 (0.15) Top View .140 (3.55) .100 (2.55) .055 (1.40)