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  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

 Fast switching speed  Ultra-small surfacemount package  For general purposeswitching applications  Highconductance SOD-523 Absolute Maximum Ratings (at Ta=25°C) P arameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current IF(AV) 150 mA Repetitive Peak Forward Current IFRM 300 mA Non-repetitive Peak Forward SurgeCurrent at t = 1µs IFSM 2 A Power Dissipation Ptot 200 mW Thermal ResistanceJunction toAmbientAir RθJA 625 ℃/W Operating Temperature Range TJ 150 ℃ StorageTemperature Range TSTG -55 to + 150 ℃ Characteristics (at Ta = 25°C)

1 Cathode 2 Anode

Parameter Symbol Min. Max. Unit ReverseBreakdown Voltage at IR = 100 µA V(BR)R 100 - V VF 1 V Peak Reverse Current at VR = 75 V at VR = 20 V IR 5 µA nA Total Capacitance at VR = 0V,f = 1MHz CT - 4 pF Reverse Recovery Time at Irr = 1 mA, IF = 10 mA, IR = 60 mA, RL = 100 Ω trr - 4 ns Marking : E1 at IR = 5 µA 75 - Forward Voltage at IF = 10 mA -

SiliconEpitaxial PlanarSwitching Diode 2 / 3www.pingjingsemi.com Revision：1.0 Mar-2019 Ratings and Characteristic Curves Forward Voltage vs Ambient Temperature Reverse Current vs Reverse Voltage Total Capacitance

SiliconEpitaxial PlanarSwitching Diode 3 / 3www.pingjingsemi.com Revision：1.0 Mar-201 9 Package Outline SOD-523