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  • Manufacturer or author: Provided By digicamel.com
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Suntan® 1N4148WT Silicon Epitaxial Planar Switching Diode F E A T U R E S Fast switching speed Ultra-small surface mount package For general purpose switching applications High conductance MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL VALUE UNIT Non-Repetitive Peak Reverse Voltage V RM 100 V Reverse Voltage V R 75 V Average Rectified Forward Current I F（AV） 125 mA Forward Continuous Current I FM 250 mA Non-repetitive Peak Forward Surge Current at t = 1 µs at t = 100 ms IFSM A Power Dissipation P tot 150 mW Thermal Resistance Junction to Ambient Air R θJA 833 ℃/W Operating Temperature Range T j - 65 to + 150 ℃ Storage Temperature Range T stg - 65 to + 150 ℃ PINNING PIN DESCRIPTION

1 Cathode

2 Anode

Marking Code:“A” Simplified outline SOD-523 and symbol

Suntan® Characteristics at Ta = 25℃ PARAMETER SYMBOL MIN. MAX. UNIT Reverse Breakdown Voltage at I R = 1 µA V(BR)R 75 - V Forward Voltage at I F = 1 mA at IF = 10 mA at IF = 50 mA at IF= 150 mA VF 0.715 0.855 1.25 V Peak Reverse Current at V R = 75 V at VR = 20 V at VR = 75 V, TJ = 150℃ at VR = 25 V, TJ = 150℃ IR μA nA μA μA Total Capacitance at V R = 0 V, f = 1 MHz CT - 2 pF Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω trr - 4 ns RATINGS AND CHARACTERISTIC CURVES 1N4148WT

Suntan® RATINGS AND CHARACTERISTIC CURVES 1N4148WT S O D - 5 2 3 PACKAGE OUTLINE Plastic surface mounted package; 2 leads