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! Low F orward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical Da ta ! Ter minals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Rat ings and Electrical Characteristics @TA=25°C unl ess otherwise specified Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Average Rec tified Output Current @T L = 100°C IO 1.0 A Non-Repeti t ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward Vol tage @I F = 1.0A VFM P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 500 µA Ty pi cal Junction Capacitance (Note 2) Cj Ty pi cal Thermal Resistance (Note 3) R/G01JL 30 °C/ W Operati ng and S torage Temperature Range Tj, TSTG Note: 1. M easured with IF = 0.5A, IR = 1. 0A, Irr = 0. 25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 1 of 2 1.00.2 2.80.1 1.9± 0.1 Cathode B and Top View 3.70.2 0.60.25 1.4± 0. 0.10-0.30 SOD - 123FL Dimensions in millimeters Glass passivated device! 4001W UNITS Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 4002W 4003W 4004W 4005W 4006W 4007W 1N4001W-1N4007W 1N4001W – 1N4007W DigiCamel
/G01/G01 I , PEAK FOR WARD SURGE CURRENT (A)FSM 1 10 100 NUMBER OFCYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current Pulse Width 8.3ms Single Half-Sine-W ave (JEDEC Method) 100 1 10 100 C , CAPACIT ANCE (pF)j V , REVERSEVOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1MHz j 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T , AMBIENTTEMPERA TURE (°C) Fig. 1 Forward Derating Curve A Single phase half-wave 60 Hz resistive or inductive load 50V DC Approx
50 NI (Non-inductive)W 10
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5 /10ns/cm +0.5A -0.25A -1.0ANotes: 1. RiseT ime = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 ReverseRecovery Time Characteristic and Test Circuit (+) (+) (-) (-) 0.01 0.1 1.0 0.6 0.8 1.0 1.2 1.4 I , INSTANT ANEOUS FWD CURRENT (A)F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25°Cj Pulse width =300 µs 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 1N4001W-1N4007W 1N4001W – 1N4007W DigiCamel